Semiconductor device

ABSTRACT

An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.

TECHNICAL FIELD

The present invention relates to a semiconductor device usingsemiconductor elements and a manufacturing method thereof.

BACKGROUND ART

Memory devices using semiconductor elements are roughly classified intovolatile memory devices that lose their memory content when power supplyis stopped and nonvolatile memory devices that can hold their memorycontent even when power supply is stopped.

As a typical example of a volatile memory device, a dynamic randomaccess memory (DRAM) is given. In a DRAM, a transistor included in amemory element is selected and an electric charge is accumulated in acapacitor, so that information is memorized.

Owing to the above-described principle, a charge in a capacitor is lostwhen information data is read in a DRAM; thus, it is necessary toperform rewriting of the information data, so that information ismemorized again after the information data reading. In addition, thereis leakage of current in a transistor included in a memory element sothat a charge accumulated at an electrode of the capacitor is lost or acharge flows into the capacitor, even if the transistor is not selectedto perform any operation, whereby data holding period is short.Therefore, it is necessary to perform rewriting in a predetermined cycle(refresh operation) and it is difficult to reduce power consumptionsatisfactorily. Further, since memory content is lost when the power isnot supplied to the DRAM, another memory device using a magneticmaterial or an optical material is needed to store information for along period.

As another example of a volatile memory device, a static random accessmemory (SRAM) is given. In an SRAM, memory content is stored using acircuit such as a flip flop, so that refresh operation is not needed. Inview of this point, SRAM is advantageous over a DRAM. However, aninconvenient in that a cost per storage capacity becomes high because acircuit such as a flip flop is used. Further, in view of the point thatmemory content is lost when the power is not supplied, an SRAM is notsuperior to a DRAM.

As a typical example of a nonvolatile memory device, flash memory isgiven. A flash memory includes a floating gate between a gate electrodeand a channel formation region in a transistor. A flash memory storesmemory content by storing a charge in the floating gate, so that a dataholding period is extremely long (semi-permanent), and thus has anadvantage that refresh operation which is necessary in a volatile memorydevice is not needed (for example, see Patent Document 1).

However, in flash memory, there is a problem in that a memory elementdoes not function after performing writing operations a predeterminednumber of times because a gate insulating layer included in the memoryelement is deteriorated by a tunnel current occurring each time awriting operation is performed. In order to relieve an adverse effect ofthis phenomenon, a method consisting in equalizing the number of writingoperations between the memory elements is employed, for example.However, a complicated peripheral circuit is needed to apply thismethod. Further, even if such a method is employed, the basic problem oflifetime is not resolved. That is, a flash memory is unsuitable forapplications in which information is rewritten with high frequency.

Further, high voltage is required to store a charge in the floating gateor to remove a charge in the floating gate. Furthermore, a relativelylong time is required for storing or removing a charge and the speed ofwriting and erasing cannot easily be increased.

REFERENCE Patent Document

[Patent Document 1] Japanese Published Patent Application No. S57-105889

Disclosure of Invention

In view of the above problem, one object of one embodiment of thepresent invention is to provide a semiconductor device having a newstructure, the semiconductor device being capable of holding memorycontent in the state where power is not supplied and having nolimitation on the number of writing operations. Another object of oneembodiment of the present invention is to provide a semiconductor havinga structure allowing using easily multivalued information.

One embodiment of the present invention is a semiconductor device havinga stack of a transistor using an oxide semiconductor and a transistorusing a material other than an oxide semiconductor. For example, thesemiconductor device can employ the following structures.

One embodiment of the present invention is a semiconductor deviceincluding: a source line; a bit line; a first signal line; a pluralityof second signal lines; a plurality of word lines; a plurality of memorycells connected in parallel between the source line and the bit line; adriver circuit for the second signal lines and the word lines to whichan address signal is input and which drives the plurality of secondsignal lines and the plurality of word lines so that a memory cellspecified by the address signal is selected from the plurality of memorycells; a driver circuit of the first signal line selecting andoutputting any of a plurality of writing potentials to the first signalline; a reading circuit to which a potential of the bit line and aplurality of reference potentials are input and which read data bycomparing the potential of the bit line and the plurality of referencepotentials; a potential generating circuit generating and supplying theplurality of writing potentials and the plurality of referencepotentials to the driver circuit of the first signal line and thereading circuit; and a boosting circuit supplying a potential to thepotential generating circuit. One of the memory cells includes: a firsttransistor having a first gate electrode, a first source electrode, anda first drain electrode; a second transistor having a second gateelectrode, a second source electrode, and a second drain electrode; anda third transistor having a third gate electrode, a third sourceelectrode, and a third drain electrode. The first transistor is providedover a substrate containing a semiconductor material. The secondtransistor includes an oxide semiconductor layer. The first gateelectrode and one of the second source electrode and the second drainelectrode are electrically connected to each other. The source line andthe first source electrode are electrically connected to each other. Thefirst drain electrode and the third source electrode are electricallyconnected to each other. The bit line and the third drain electrode areelectrically connected to each other. The first signal line and theother of the second source electrode and the second drain electrode areelectrically connected to each other. One of the second signal lines andthe second gate electrode are electrically connected to each other. Oneof the word lines and the third gate electrode are electricallyconnected to each other.

Additionally, in the above structure, the semiconductor device includesa capacitor electrically connected to the first gate electrode and oneof the second source electrode and the second drain electrode.

Another embodiment of the present invention is a semiconductor deviceincluding: a source line; a bit line; a first signal line; a pluralityof second signal lines; a plurality of word lines; a plurality of memorycells connected in parallel between the source line and the bit line; adriver circuit for the second signal lines and the word lines to whichan address signal is input and which drives the plurality of secondsignal lines and the plurality of word lines so that a memory cellspecified by the address signal is selected from the plurality of memorycells; a driver circuit of the first signal line selecting andoutputting any of a plurality of writing potentials to the first signalline; a reading circuit to which a potential of the bit line and aplurality of reference potentials are input and which has a referencememory cell, and reads data by comparing conductance of the specifiedmemory cell and conductance of the reference memory cell; a potentialgenerating circuit generating and supplying the plurality of writingpotentials and the plurality of reference potentials to the drivercircuit of the first signal line and the reading circuit; and a boostingcircuit supplying a potential to the potential generating circuit. Oneof the plurality of memory cells includes: a first transistor having afirst gate electrode, a first source electrode, and a first drainelectrode; a second transistor having a second gate electrode, a secondsource electrode, and a second drain electrode; and a third transistorhaving a third gate electrode, a third source electrode, and a thirddrain electrode. The first transistor is provided over a substratecontaining a semiconductor material. The second transistor includes anoxide semiconductor layer. The first gate electrode and one of thesecond source electrode and the second drain electrode are electricallyconnected to each other. The source line and the first source electrodeare electrically connected to each other. The first drain electrode andthe third source electrode are electrically connected to each other. Thebit line and the third drain electrode are electrically connected toeach other. The first signal line and the other of the second sourceelectrode and the second drain electrode are electrically connected toeach other. One of the second signal lines and the second gate electrodeare electrically connected to each other. One of the word lines and thethird gate electrode are electrically connected to each other.

Another embodiment of the present invention is a semiconductor deviceincluding: a source line; a bit line; a first signal line; a pluralityof second signal lines; a plurality of word lines; a plurality of memorycells connected in parallel between the source line and the bit line; adriver circuit of the second line and the word line to which an addresssignal and a plurality of reference potentials are input and whichdrives the plurality of second signal lines and the plurality of wordlines so that a memory cell specified by the address signal is selectedfrom the plurality of memory cells and which selects and outputs any ofthe plurality of reference potentials to one selected word line; adriver circuit of the first signal line selecting and outputting any ofa plurality of writing potentials to the first signal line; a readingcircuit to which the bit line is connected and which reads data byreading conductance of the specified memory cell to read data; apotential generating circuit generating and supplying the plurality ofwriting potentials and the plurality of reference potentials to thedriver circuit of the first signal line and the reading circuit; and aboosting circuit supplying a potential to the potential generatingcircuit. One of the memory cells includes: a first transistor having afirst gate electrode, a first source electrode, and a first drainelectrode; a second transistor having a second gate electrode, a secondsource electrode, and a second drain electrode; and a capacitor. Thefirst transistor is provided over a substrate containing a semiconductormaterial. The second transistor is includes an oxide semiconductorlayer. The first gate electrode, one of the second source electrode andthe second drain electrode, and one of electrodes of the capacitor areelectrically connected to one another. The source line and the firstsource electrode are electrically connected to each other. The bit lineand the first drain electrode are electrically connected to each other.The first signal line and the other of the second source electrode andthe second drain electrode are electrically connected to each other. Oneof the second signal lines and the second gate electrode areelectrically connected to each other. One of the word lines and theother of the electrodes of the capacitor are electrically connected toeach other.

In the above structure, the first transistor includes the followingelements: a channel formation region provided over the substratecontaining the semiconductor material, impurity regions formed with thechannel formation region sandwiched therebetween, the first gateinsulating layer over the channel formation region, a first gateelectrode over the first gate insulating layer, and the first sourceelectrode and the first drain electrode both of which are electricallyconnected to the impurity regions.

Further, in the above structure, the second transistor includes thefollowing elements: the second gate electrode over the substratecontaining the semiconductor material, a second gate insulating layerover the second gate electrode, the oxide semiconductor layer over thesecond gate insulating layer, and the second source electrode and thesecond drain electrode both of which are electrically connected to theoxide semiconductor layer.

In the above structure, the third transistor includes the followingelements: a channel formation region provided over the substratecontaining the semiconductor material, impurity regions formed with thechannel formation region sandwiched therebetween, the third gateinsulating layer over the channel formation region, a third gateelectrode over the third gate insulating layer, and the third sourceelectrode and the third drain electrode both of which are electricallyconnected to the impurity regions

In the above structure, the substrate containing the semiconductormaterial is preferably a single crystal semiconductor substrate. Inparticular, the semiconductor material is preferably silicon. Further,as a substrate containing the semiconductor material, an SOI substratemay also be used.

Preferably, in the above structure, the oxide semiconductor layercontains an In—Ga—Zn—O based oxide semiconductor material. Inparticular, the oxide semiconductor layer preferably contains anIn₂Ga₂ZnO₇ crystal. In addition, preferably, the hydrogen concentrationof the oxide semiconductor layer is less than or equal to 5×10¹⁹atoms/cm³. The off-state current of the second transistor is preferablyless than or equal to 1×10⁻¹³ A.

In addition, in the above structure, the second transistor can beprovided in a region overlapping with the first transistor.

Note that in this specification, “over” and “below” do not necessarilymean “directly on” and “directly under”, respectively, in thedescription of a physical relationship between components. For example,the expression of “a first gate electrode over a gate insulating layer”may refer to the case where another component is interposed between thegate insulating layer and the first gate electrode. In addition, theterms “above” and “below” are just used for convenience of explanationsand they can be interchanged unless otherwise specified.

In this specification, the term “electrode” or “wiring” does not limitthe function of components. For example, an “electrode” can be used as apart of a “wiring”, and the “wiring” can be used as a part of the“electrode”. In addition, the term “electrode” or “wiring” can also meana combination of a plurality of “electrodes” and “wirings”, for example.

Further, functions of a “source” and a “drain” might be switched whentransistors having different polarities are employed or a direction ofcurrent flow is changed in circuit operation, for example. Therefore,the terms “source” and “drain” can be switched in this specification.

Note that in this specification, the expression of “electricallyconnected” includes the case of electrical connection through “an objecthaving any electrical function”. Here, there is no particular limitationon “an object having any electrical function” as long as the objectenables transmission and reception of an electrical signal betweencomponents connected by the object.

For example, the category “an object having any electrical function” caninclude a switching element such as a transistor, a resistor, aninductor, a capacitor, and other elements having several functions, aswell as electrodes and wirings.

In general, the term “SOI substrate” means a substrate having a siliconsemiconductor layer over an insulating surface. In this specification,the term “SOI substrate” also means a substrate having a semiconductorlayer using a material other than silicon over an insulating surface.That is, a semiconductor layer included in the “SOI substrate” is notlimited to a silicon semiconductor layer. Additionally, a substrate inan “SOI substrate” is not limited to a semiconductor substrate such as asilicon wafer, and may be a non-semiconductor substrate such as a glasssubstrate, a quartz substrate, a sapphire substrate, and a metalsubstrate. That is, an “SOI substrate” also includes a conductivesubstrate and an insulating substrate over which a layer is formed usinga semiconductor material. In addition, in this specification, a“semiconductor substrate” means a substrate of only a semiconductormaterial and also a general substrate of a material including asemiconductor material. In other words, in this specification, an “SOIsubstrate” is also included in the broad category of a “semiconductorsubstrate”.

Moreover, in this specification, a semiconductor material other than anoxide semiconductor may be any semiconductor material as long as it is asemiconductor material other than an oxide semiconductor material. Forexample, silicon, germanium, silicon germanium, silicon carbide, galliumarsenide, or the like can be given. Besides, an organic semiconductormaterial and the like can be used. Note that in the case where amaterial included in a semiconductor device and the like is notparticularly specified, an oxide semiconductor material or asemiconductor material other than an oxide semiconductor material may beused.

One embodiment of the present invention provides, in its lower portion,a semiconductor device including a transistor using a material otherthan an oxide semiconductor in its channel formation region, and, in itsupper portion, a transistor using an oxide semiconductor in its channelformation region.

A transistor using an oxide semiconductor has extremely low off-statecurrent; therefore, by using the transistor, memory content can bestored for a relatively long time. That is, refresh operation can becomeunnecessary, or frequency of refresh operation can be reducedconsiderably, so that power consumption can be reduced substantially.Further, even in the case where power is not supplied, memory contentcan be stored for a long time.

In addition, high voltage is not needed for writing information in thesemiconductor device and there is no problem of deterioration ofelements. For example, since there is no need to perform injection ofelectrons to a floating gate and extraction of electrons from a floatinggate which are needed in a conventional nonvolatile memory,deterioration such as deterioration of a gate insulating layer does notoccur. That is, the semiconductor device according to one embodiment ofthe present invention does not have a limit on the number of times ofwriting which is a problem in a conventional nonvolatile memory, andreliability thereof is drastically improved. Further, information iswritten according to an on state and an off state of the transistor,whereby high-speed operation can be easily realized. Additionally, wheninformation is written, there is an advantage that operation for erasingthe previously stored information is not needed.

Further, the transistor formed using a material other than an oxidesemiconductor can be operated at sufficiently high speed; therefore, byusing the transistor, stored contents can be read out at high speed.

Moreover, the semiconductor device according to one embodiment of thepresent invention can easily multivalue data by being provided with aboosting circuit, so that storage capacity can be increased.

Accordingly, a semiconductor device having unprecedented characteristicscan be realized by being provided with a combination of a transistorusing a material other than an oxide semiconductor material and atransistor using an oxide semiconductor material.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 is a circuit diagram for describing a semiconductor device;

FIG. 2A is a cross-sectional view for describing a semiconductor deviceand FIG. 2B is a plan view for describing the semiconductor device;

FIGS. 3A to 3H are cross-sectional views each for explaining amanufacturing step of a semiconductor device;

FIGS. 4A to 4G are cross-sectional views each for explaining amanufacturing step of a semiconductor device;

FIGS. 5A to 5D are cross-sectional views each for explaining amanufacturing step of a semiconductor device;

FIG. 6 is a cross-sectional view of a transistor formed using an oxidesemiconductor;

FIG. 7 is an energy band diagram (schematic diagram) along an A-A′section in FIG. 6;

FIG. 8A is a diagram illustrating a state where a positive voltage(V_(G)>0) is applied to a gate electrode (GE), and FIG. 8B is a diagramillustrating a state where a negative potential (V_(G)<0) is applied tothe gate electrode (GE);

FIG. 9 is a diagram illustrating the relationship between the vacuumlevel and the electron affinity (χ) of an oxide semiconductor;

FIG. 10 is a graph illustrating a C-V characteristic;

FIG. 11 is a graph illustrating a relation between V_(g) and (1/C)²;

FIG. 12 is a cross-sectional view for describing a semiconductor device;

FIGS. 13A and 13B are cross-sectional views for describing asemiconductor device;

FIGS. 14A and 14B are cross-sectional views for describing asemiconductor device;

FIGS. 15A and 15B are cross-sectional views for describing asemiconductor device;

FIG. 16 is a circuit diagram for describing a memory element;

FIG. 17 is a circuit diagram for describing a semiconductor device;

FIG. 18 is a circuit diagram for describing a driver circuit;

FIG. 19 is a circuit diagram for describing a driver circuit;

FIG. 20 is a circuit diagram for describing a reading circuit;

FIG. 21 is a circuit diagram for describing a potential generatingcircuit;

FIGS. 22A and 22B are circuit diagrams for describing a boostingcircuit;

FIG. 23 is a circuit diagram for describing a differential senseamplifier circuit;

FIG. 24 is a circuit diagram for describing a latch sense amplifier;

FIGS. 25A and 25B are timing charts for explaining an operation;

FIG. 26 is a circuit diagram for describing a semiconductor device;

FIG. 27 is a circuit diagram for describing a reading circuit;

FIG. 28 is a timing chart for explaining an operation;

FIG. 29 is a circuit diagram for describing a reading circuit;

FIG. 30 is a timing chart for explaining an operation;

FIG. 31 is a circuit diagram for describing a memory element;

FIG. 32 is a circuit diagram for describing a semiconductor device;

FIG. 33 is a circuit diagram for describing a reading circuit;

FIG. 34 is a circuit diagram for describing a driver circuit;

FIG. 35 is a timing chart for explaining an operation;

FIG. 36 is a graph illustrating a relation between a potential of a nodeA and a potential of a word line; and

FIGS. 37A to 37F are diagrams each describing an electronic appliance.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, examples of embodiments of the present invention will bedescribed with reference to the drawings. Note that the presentinvention is not limited to the following descriptions and it will bereadily appreciated by those skilled in the art that modes and detailscan be modified in various ways without departing from the spirit andthe scope of the present invention. Therefore, the invention should notbe interpreted as being limited to the description of the followingembodiment modes.

Note that for the easy understanding, the position, size, range and thelike of each component illustrated in the drawings and the like are notactual ones in some cases. Therefore, the present invention is notlimited to the position, size, and range and the like disclosed in thedrawings and the like.

Note that in this specification, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents, and the terms do not limit the components numerically.

Embodiment 1

In this embodiment, structures and manufacturing methods ofsemiconductor devices according to one embodiment of the disclosedinvention are described with reference to FIG. 1, FIGS. 2A and 2B, FIGS.3A to 3H, FIGS. 4A to 4G, FIGS. 5A to 5D, FIG. 6, FIGS. 7A and 7B, FIGS.8A and 8B, FIG. 9, FIG. 10, FIG. 11, FIG. 12, FIGS. 13A and 13B, FIGS.14A and 14B, and FIGS. 15A and 15B.

<Circuit Configuration of Semiconductor Device>

FIG. 1 illustrates an example of a circuit configuration of asemiconductor device. The semiconductor device includes a transistor 160which uses a material other than an oxide semiconductor and a transistor162 which uses an oxide semiconductor. Note that a mark “OS” is added tothe transistor 162 in FIG. 1 to show that the transistor 162 uses anoxide semiconductor.

Here, a gate electrode of the transistor 160 is electrically connectedto one of a source electrode and a drain electrode of the transistor162. A first wiring (which is denoted as “1st Line” and also called asource line) and a second wiring (which is denoted as “2nd Line” andalso called a bit line) are electrically connected to a source electrodeof the transistor 160 and a drain electrode of the transistor 160,respectively. Further, a third wiring (which is denoted as “3rd Line”and also called a first signal line) and a fourth wiring (which isdenoted as “4th Line” and also called a second signal line) areelectrically connected to the other of the source electrode and thedrain electrode of the transistor 162 and to a gate electrode of thetransistor 162, respectively.

The transistor 160 which uses a material other than an oxidesemiconductor can operate at sufficiently high speed; thus, can readstored contents and the like at high speed. In addition, off-statecurrent is extremely small in the transistor 162 which uses an oxidesemiconductor. Therefore, when the transistor 162 is turned off, apotential of the gate electrode of the transistor 160 can be held for anextremely long time.

The advantage that the potential of the gate electrode can be held foran extremely long time enables writing, holding, and reading ofinformation to be performed as described below.

Description is made on writing and holding of information first. First,a potential of the fourth wiring is set to a potential putting thetransistor 162 in an on state. Accordingly, a potential of the thirdwiring is applied to the gate electrode of the transistor 160 (writingdata operation). After that, the potential of the fourth wiring is setto a potential putting the transistor 162 in an off state; accordingly,the potential of the gate electrode of the transistor 160 is held(holding data operation).

Since the off-state current of the transistor 162 is extremely small,the potential of the gate electrode of the transistor 160 is held for along time. For example, when the potential of the gate electrode of thetransistor 160 is a potential putting the transistor 160 in an on state,the on state of the transistor 60 is kept for a long time. When thepotential of the gate electrode of the transistor 160 is a potential tomake the transistor 160 be in an off state, the off state of thetransistor 160 is kept for a long time.

Next, description is made on the reading of information operation. Whenan on state or an off state of the transistor 160 is kept as describedabove and a predetermined potential (a low potential) is applied to thefirst wiring, the value of a potential of the second wiring variesdepending on a state of the transistor 160 which is an on state or anoff state. For example, when the transistor 160 is in an on state, thepotential of the second wiring is lowered by being affected by thepotential of the first wiring. On the other hand, when the transistor160 is in an off state, the potential of the second wiring is notchanged.

In this manner, by comparing the potential of the first wiring with thepotential of the second wiring in a state where information is held, theinformation can be read.

Then, description is made on rewriting of information. Rewriting ofinformation is performed in a manner similar to that of the writing andholding of information which are described above. That is, the potentialof the fourth wiring is set to a potential putting the transistor 162 inan on state, whereby the transistor 162 is put in an on state.Accordingly, the potential of the third wiring (a potential relating tonew information) is applied to the gate electrode of the transistor 160.After that, the potential of the fourth wiring is set to a potentialputting the transistor 162 in an off state, whereby the transistor 162is put in an off state; thus, the new information is held.

As described above, in the semiconductor device according to oneembodiment of the disclosed invention, information can be directlyrewritten by performing rewriting of information. Erasing operation,necessary in a flash memory and the like, is thus not needed; therefore,reduction in operation speed due to erasing operation can be suppressed.In other words, high-speed operation of a semiconductor device isrealized.

Note that, in the above description, an n-type transistor (an n-channeltransistor) using electrons as carriers is used; however, a p-channeltransistor using holes as carriers, needless to say, can be used insteadof an n-channel transistor.

It is also needless to say that a capacitor may be added to the gateelectrode of the transistor 160 so that the potential of the gateelectrode of the transistor 160 is easily held.

<Plan Structure and Cross-Sectional Structure of a Semiconductor Device>

An example of a structure of the above semiconductor device isillustrated in FIGS. 2A and 2B. FIGS. 2A and 2B are a cross-sectionalview of the semiconductor device and a plan view thereof, respectively.Here, FIG. 2A corresponds to a cross-section taken along line A1-A2 andline B1-B2 of FIG. 2B. The semiconductor device illustrated in FIGS. 2Aand 2B includes the transistor 160 using a material other than an oxidesemiconductor in a lower portion and the transistor 162 using an oxidesemiconductor in an upper portion. Note that although n-channeltransistors are described as the transistors 160 and 162, p-channeltransistors may be employed. A p-channel transistor can be preferablyused as the transistor 160, in particular.

The transistor 160 includes: a channel formation region 116 which isprovided in a substrate 100 containing a semiconductor material;impurity regions 114 between which the channel formation region 116 issandwiched and high-concentration impurity regions 120 between which thechannel formation region 116 is sandwiched (impurity regions 114 andhigh-concentration impurity regions 120 are also collectively calledimpurity regions); a gate insulating layer 108 a provided over thechannel formation region 116: a gate electrode 110 a provided over thegate insulating layer 108 a; a source or drain electrode 130 aelectrically connected to a first impurity region 114 on one side of thechannel formation region 116; and a source or drain electrode 130 belectrically connected to a second impurity regions 114 on another sideof the channel formation region 116.

Here, sidewall insulating layers 118 are provided for side surfaces ofthe gate electrode 110 a. Moreover, at least parts of the side wallinsulating layers 118 are comprised between the high concentrationimpurity regions 120 formed in regions of the substrate 100, when seenfrom above, and metal compound regions 124 are present over the highconcentration impurity regions 120. Further, an element insulationinsulating layer 106 is formed over the substrate 100 so as to surroundthe p-type transistor 160, and an interlayer insulating layer 126 and aninterlayer insulating layer 128 are formed so as to cover the p-typetransistor 160. The source or drain electrode 130 a is electricallyconnected to a first metal compound region 124 on the one side of thechannel formation region 116, and the source or drain electrode 130 b iselectrically connected to a second metal compound region 124 on theother side of the channel formation region 116 through openings in theinterlayer insulating layer 126 and the interlayer insulating layer 128.In other words, the source or drain electrode 130 a is electricallyconnected to a first high concentration region 120 and to the firstimpurity region 114 which are on the one side of the channel formationregion 116 through the first metal compound region 124 on the one sideof the channel formation region 116, and the source or drain electrode130 b is electrically connected to a second high concentration region120 and to the second impurity region 114 which are on the other side ofthe channel formation region 116 through the second metal compoundregion 124 on the other side the channel formation region 116. Further,the gate electrode 110 a is electrically connected to an electrode 130 cprovided in a similar manner to the source or drain electrode 130 a andthe source or drain electrode 130 b.

The transistor 162 includes: a gate electrode 136 d provided over theinterlayer insulating layer 128; a gate insulating layer 138 providedover the gate electrode 136 d; an oxide semiconductor layer 140 providedover the gate insulating layer 138; and a source or drain electrode 142a and a source or drain electrode 142 b which are provided over andelectrically connected to the oxide semiconductor layer 140.

Here, the gate electrode 136 d is provided so as to be embedded in aninsulating layer 132 which is formed over the interlayer insulatinglayer 128. Furthermore, similarly to the gate electrode 136 d, anelectrode 136 a, an electrode 136 b, and an electrode 136 c are formedin contact with the source or drain electrode 130 a, the source or drainelectrode 130 b, and the electrode 130 c, respectively.

Over the transistor 162, a protective insulating layer 144 is providedin contact with part of the oxide semiconductor layer 140. An interlayerinsulating layer 146 is provided over the protective insulating layer144. Here, in the protective insulating layer 144 and the interlayerinsulating layer 146, openings reaching the source or drain electrode142 a and the source or drain electrode 142 b are formed. In theopenings, an electrode 150 d and an electrode 150 e are formed to be incontact with the source or drain electrode 142 a and the source or drainelectrode 142 b, respectively. Similarly to the electrodes 150 d and 150e, an electrode 150 a, an electrode 150 b, and an electrode 150 c areformed to be in contact with the electrode 136 a, the electrode 136 b,and the electrode 136 c, respectively, through openings provided in thegate insulating layer 138, the protective insulating layer 144, and theinterlayer insulating layer 146.

Here, the oxide semiconductor layer 140 is preferably an oxidesemiconductor layer highly purified by removing an impurity such ashydrogen. Specifically, hydrogen concentration in the oxidesemiconductor layer 140 is less than or equal to 5×10¹⁹ atoms/cm³,preferably, less than or equal to 5×10¹⁸ atoms/cm³, or more preferably,less than or equal to 5×10¹⁷ atoms/cm³. In addition, it is desirablethat the oxide semiconductor layer 140 contain sufficient oxygen so thatdefects due to oxygen vacancies are reduced. In the oxide semiconductorlayer 140 which is highly purified by sufficiently reducing the hydrogenconcentration, carrier concentration is less than or equal to1×10¹²/cm³, preferably less than or equal to 1×10¹¹/cm³. In this manner,by using an oxide semiconductor which is made to be an i-type(intrinsic) oxide semiconductor or a substantially i-type oxidesemiconductor, the transistor 162 which has extremely favorableoff-state current characteristics can be obtained. For example, when adrain voltage V_(d) is +1 V or +10 V and a gate voltage V_(g) rangesfrom −5 V to −20 V, off-state current is less than or equal to 1×10⁻¹³A. When the oxide semiconductor layer 140 which is highly purified bysufficiently reducing the hydrogen concentration and in which thedefects due to oxygen vacancies are reduced is used and off-statecurrent of the transistor 162 is reduced, a semiconductor device havinga new structure can be realized. Note that the hydrogen concentration inthe oxide semiconductor layer 140 was measured by secondary ion massspectroscopy (SIMS).

Furthermore, an insulating layer 152 is provided over the interlayerinsulating layer 146. An electrode 154 a, an electrode 154 b, anelectrode 154 c, and an electrode 154 d are provided so as to beembedded in the insulating layer 152. Here, the electrode 154 a is incontact with the electrode 150 a; the electrode 154 b, the electrode 150b; the electrode 154 c, the electrodes 150 c and 150 d; and theelectrode 154 d, the electrode 150 e.

That is, in the semiconductor device illustrated in FIGS. 2A and 2B, thegate electrode 110 a of the transistor 160 is electrically connected tothe source or drain electrode 142 a of the transistor 162 through theelectrodes 130 c, 136 c, 150 c, 154 c, and 150 d.

<Method for Manufacturing Semiconductor Device>

Next, an example of a method for manufacturing the above-describedsemiconductor device will be described. First, a method formanufacturing the transistor 160 in the lower portion will be describedwith reference to FIGS. 3A to 3H and next, a method for manufacturingthe transistor 162 in the upper portion will be described with referenceto FIGS. 4A to 4G and FIGS. 5A to 5D.

<Method for Manufacturing a Transistor in a Lower Portion>

First, the substrate 100 which contains a semiconductor material isprepared (see FIG. 3A). As the substrate 100 which contains asemiconductor material, a single crystal semiconductor substrate or apolycrystalline semiconductor substrate containing silicon, siliconcarbide, or the like, a compound semiconductor substrate containingsilicon germanium or the like, an SOI substrate, or the like can beused. Here, an example in which a single crystal silicon substrate isused as the substrate 100 containing a semiconductor material isdescribed. Note that in general, the term “SOI substrate” means asubstrate having a silicon semiconductor layer over an insulatingsurface. In this specification, the term “SOI substrate” also means asubstrate having a semiconductor layer using a material other thansilicon over an insulating surface. That is, a semiconductor layerincluded in the “SOI substrate” is not limited to a siliconsemiconductor layer. In addition, the SOI substrate includes a substratewhich has a semiconductor layer over an insulating substrate such as aglass substrate, with an insulating layer between the semiconductorlayer and the insulating substrate.

Over the substrate 100, a protective layer 102 which functions as a maskfor forming an element insulation insulating layer is formed (see FIG.3A). As the protective layer 102, for example, an insulating layerformed using silicon oxide, silicon nitride, silicon nitride oxide, orthe like can be used. Note that an impurity element giving n-typeconductivity or an impurity element giving p-type conductivity may beadded to the substrate 100 before or after the above step to control thethreshold voltage of the transistor. As the impurity giving n-typeconductivity, phosphorus, arsenic, or the like can be used when thesemiconductor material contained in the substrate 100 is silicon. As theimpurity giving p-type conductivity, boron, aluminum, gallium, or thelike can be used, for example.

Next, part of the substrate 100 in a region which is not covered withthe protective layer 102 (an exposed region) is removed by etching withthe use of the above protective layer 102 as a mask. Thus, an insulatedsemiconductor region 104 is formed (see FIG. 3B). For the etching, dryetching is preferably performed, but wet etching can be performed. Anetching gas and an etchant can be selected as appropriate depending on amaterial of the object to be etched.

Next, an insulating layer is formed so as to cover the semiconductorregion 104 and is selectively removed in a region which overlaps withthe semiconductor region 104, whereby the element insulation insulatinglayer 106 is formed (see FIG. 3B). The insulating layer is formed usingsilicon oxide, silicon nitride, silicon nitride oxide, or the like. As amethod for removing the insulating layer, there are etching andpolishing treatment such as CMP, and any of them can be employed. Notethat the protective layer 102 is removed either after the semiconductorregion 104 is formed or after the element insulation insulating layer106 is formed.

Then, an insulating layer is formed over the semiconductor region 104and a layer containing a conductive material is formed over theinsulating layer.

The insulating layer serves as a gate insulating layer later andpreferably has a single-layer structure or a stacked-layer structurefilm containing silicon oxide, silicon nitride oxide, silicon nitride,hafnium oxide, aluminum oxide, tantalum oxide, or the like obtained byusing a CVD method, a sputtering method, or the like. Alternatively, theabove insulating layer may be obtained by oxidizing or nitriding asurface of the semiconductor region 104 by high-density plasma treatmentor thermal oxidation treatment. The high-density plasma treatment can beperformed using, for example, a mixed gas of a combination of a rare gassuch as He, Ar, Kr, or Xe and oxygen, nitrogen oxide, ammonia, nitrogen,or hydrogen. There is no particular limitation on the thickness of theinsulating layer, but the thickness can be greater than or equal to 1 nmand less than or equal to 100 nm, for example.

The layer containing a conductive material can be formed using a metalmaterial such as aluminum, copper, titanium, tantalum, or tungsten.Alternatively, the layer containing a conductive material may be formedusing a semiconductor material such as polycrystalline siliconcontaining a conductive material. There is also no particular limitationon a method for forming the layer containing a conductive material, andany of a variety of deposition methods such as an evaporation method, aCVD method, a sputtering method, and a spin coating method isapplicable. Note that in this embodiment, an example of the case wherethe layer containing a conductive material is formed using a metalmaterial is described.

After that, by selectively etching the insulating layer and the layercontaining a conductive material, the gate insulating layer 108 a andthe gate electrode 110 a are formed (see FIG. 3C).

Next, an insulating layer 112 which covers the gate electrode 110 a isformed (see FIG. 3C). Phosphorus (P), arsenic (As), or the like is thenadded to the semiconductor region 104, whereby the impurity regions 114with a shallow junction depth are formed (see FIG. 3C). Note thatalthough phosphorus or arsenic is added here so that an n-channeltransistor is formed, an impurity element such as boron (B) or aluminum(Al) may be added in the case of forming a p-channel transistor. Notealso that the channel formation region 116 is formed in thesemiconductor region 104 under the gate insulating layer 108 a byformation of the impurity regions 114 (see FIG. 3C). Here, theconcentration of the added impurity can be set as appropriate; in thecase where a semiconductor element is highly miniaturized, theconcentration is preferably set to be high. Further, a process in whichthe insulating layer 112 is formed after formation of the impurityregions 114 may be employed instead of the process employed here inwhich the impurity regions 114 are formed after formation of theinsulating layer 112.

Then, the sidewall insulating layers 118 are formed (see FIG. 3D). Aninsulating layer is formed so as to cover the insulating layer 112 andthen is subjected to highly anisotropic etching, whereby the sidewallinsulating layers 118 can be formed in a self-aligned manner. It ispreferable that the insulating layer 112 be partly etched at this timeso that a top surface of the gate electrode 110 a and top surfaces ofthe impurity regions 114 are exposed.

After that, an insulating layer is formed so as to cover the gateelectrode 110 a, the impurity regions 114, the side wall insulatinglayers 118, and the like. Phosphorus (P), arsenic (As), or the like isthen added to regions which are in contact with the impurity regions114, whereby the high-concentration impurity regions 120 are formed (seeFIG. 3E). Next, the above insulating layer is removed and a metal layer122 is formed so as to cover the gate electrode 110 a, the sidewallinsulating layers 118, the high-concentration impurity regions 120, andthe like (see FIG. 3E). Any of a variety of film formation methods suchas a vacuum evaporation method, a sputtering method, and a spin coatingmethod is applicable to formation of the metal layer 122. It ispreferable that the metal layer 122 be formed using a metal materialthat reacts with a semiconductor material included in the semiconductorregion 104 so as to form a metal compound having low resistance.Examples of such a metal material include titanium, tantalum, tungsten,nickel, cobalt, and platinum.

Next, heat treatment is performed, whereby the metal layer 122 reactswith the semiconductor material. Accordingly, the metal compound regions124 which are in contact with the high-concentration impurity regions120 are formed (see FIG. 3F). Note that, in the case of usingpolycrystalline silicon for the gate electrode 110 a, a portion of thegate electrode 110 a which is in contact with the metal layer 122 alsohas the metal compound region.

As the heat treatment, irradiation with a flash lamp can be employed.Although it is needless to say that another heat treatment method may beused, a method by which heat treatment for an extremely short time canbe achieved is preferably used in order to improve the controllabilityof chemical reaction in formation of the metal compound. Note that themetal compound regions 124 are formed through reaction of the metalmaterial with the semiconductor material and have sufficiently highconductivity. By formation of the metal compound regions 124, electricresistance can be sufficiently reduced and element characteristics canbe improved. The metal layer 122 is removed after formation of the metalcompound regions 124.

The interlayer insulating layers 126 and 128 are formed so as to coverthe components formed in the above steps (see FIG. 3G). The interlayerinsulating layers 126 and 128 can be formed using a material containingan inorganic insulating material such as silicon oxide, silicon nitrideoxide, silicon nitride, hafnium oxide, aluminum oxide, or tantalumoxide. Alternatively, an organic insulating material such as polyimideor acrylic can be used. Note that although the interlayer insulatinglayer 126 and the interlayer insulating layer 128 have a two-layerstructure here, the structure of the interlayer insulating layers is notlimited to this. A surface of the interlayer insulating layer 128 ispreferably subjected to CMP, etching, or the like so as to be flattenedafter the interlayer insulating layer 128 is formed.

After that, openings reaching the metal compound regions 124 are formedin the interlayer insulating layers, and then the source or drainelectrode 130 a and the source or drain electrode 130 b are formed inthe openings (see FIG. 3H). For example, the source or drain electrode130 a and the source or drain electrode 130 b can be formed as follows:a conductive layer is formed in a region including the openings by a PVDmethod, a CVD method, or the like; and then, part of the conductivelayer is removed by etching, CMP, or the like.

Note that in the case of forming the source or drain electrode 130 a andthe source or drain electrode 130 b by removing part of the conductivelayer, surfaces thereof are preferably processed to be flat. Forexample, in the case where a titanium film, a titanium nitride film, orthe like is formed to have a small thickness in the region including theopenings and a tungsten film is then formed so as to be embedded in theopenings, CMP which is performed after that can remove an unnecessaryportion of the tungsten film, titanium film, titanium nitride film, orthe like, and improve the flatness of the surfaces. By flatteningsurfaces including the surfaces of the source or drain electrode 130 aand the source or drain electrode 130 b as described above, favorableelectrodes, wirings, insulating layers, semiconductor layers, or thelike can be formed in a subsequent step.

Note that although only the source or drain electrode 130 a and thesource or drain electrode 130 b which are in contact with the metalcompound regions 124 are described, an electrode which is in contactwith the gate electrode 110 a (e.g., the electrode 130 c of FIG. 2A) andthe like can be formed in the same step. There is no particularlimitation on a material used for the source or drain electrode 130 aand the source or drain electrode 130 b and any of a variety ofconductive materials can be used. For example, a conductive materialsuch as molybdenum, titanium, chromium, tantalum, tungsten, aluminum,copper, neodymium, or scandium can be used.

Through the above process, the transistor 160 which uses the substrate100 containing a semiconductor material is formed. Note that electrodes,wirings, insulating layers, or the like may be formed as well after theabove process is performed. When a multilayer wiring structure in whichan interlayer insulating layer and a conductive layer are stacked isemployed as a wiring structure, a highly-integrated semiconductor devicecan be provided.

<Method for Manufacturing a Transistor in an Upper Portion>

Next, a process through which the transistor 162 is manufactured overthe interlayer insulating layer 128 is described with reference to FIGS.4A to 4G and FIGS. 5A to 5D. Note that the transistor 160 and the likebelow the transistor 162 are omitted in FIGS. 4A to 4G and FIGS. 5A to5D, which illustrate a manufacturing process of a variety of electrodesover the interlayer insulating layer 128, the transistor 162, and thelike.

First, the insulating layer 132 is formed over the interlayer insulatinglayer 128, the source or drain electrode 130 a, the source or drainelectrode 130 b, and the electrode 130 c (see FIG. 4A). The insulatinglayer 132 can be formed by a PVD method, a CVD method, or the like. Amaterial containing an inorganic insulating material such as siliconoxide, silicon nitride oxide, silicon nitride, hafnium oxide, aluminumoxide, or tantalum oxide can be used for the insulating layer 132.

Next, openings reaching the source or drain electrode 130 a, the sourceor drain electrode 130 b, and the electrode 130 c are formed in theinsulating layer 132. At this time, another opening is formed in aregion where the gate electrode 136 d is to be formed. A conductivelayer 134 is formed so as to be embedded in the openings (see FIG. 4B).The above openings can be formed by etching with the use of a mask, forexample. The mask can be formed by exposure using a photomask, forexample. For the etching, either wet etching or dry etching may beperformed but dry etching is preferable in view of the fine patterning.The conductive layer 134 can be formed by a film formation method suchas a PVD method or a CVD method. Examples of a material for theconductive layer 134 include a conductive material such as molybdenum,titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, andscandium, an alloy of any of these, and a compound containing any ofthese (e.g., nitride of any of these).

Specifically, for example, the conductive layer 134 can be formed asfollows: a titanium film is formed to have a small thickness by a PVDmethod in a region including the openings and a titanium nitride film isthen formed to have a small thickness by a CVD method; and then, atungsten film is formed so as to fill the openings. Here, the titaniumfilm formed by a PVD method has a function of reducing formation of anoxide film at an interface with an electrode in a lower portion (here,the source or drain electrode 130 a, the source or drain electrode 130b, the electrode 130 c, or the like) so that contact resistance with thelower electrode is reduced. In addition, the subsequently formedtitanium nitride film has a barrier property such that diffusion of aconductive material is prevented. Further, after a barrier film isformed using titanium, titanium nitride, or the like, a copper film maybe formed by a plating method.

After the conductive layer 134 is formed, part of the conductive layer134 is removed by etching, CMP, or the like so that the insulating layer132 is exposed and the electrodes 136 a, 136 b, and 136 c, and the gateelectrode 136 d are formed (see FIG. 4C). Note that when the electrodes136 a, 136 b, and 136 c, and the gate electrode 136 d are formed byremoving part of the above conductive layer 134, the process ispreferably performed so that flattened surfaces are obtained. Byflattening surfaces of the insulating layer 132, the electrodes 136 a,136 b, and 136 c, and the gate electrode 136 d, favorable electrodes,wirings, insulating layers, semiconductor layers, and the like can beformed in a subsequent step.

After that, the gate insulating layer 138 is formed so as to cover theinsulating layer 132, the electrodes 136 a, 136 b, and 136 c, and thegate electrode 136 d (see FIG. 4D). The gate insulating layer 138 can beformed by a sputtering method, a CVD method, or the like. The gateinsulating layer 138 preferably contains silicon oxide, silicon nitride,silicon oxynitride, silicon nitride oxide, aluminum oxide, hafniumoxide, tantalum oxide, or the like. Note that the gate insulating layer138 may have a single-layer structure or a stacked-layer structure. Forexample, the gate insulating layer 138 of silicon oxynitride can beformed by a plasma CVD method using silane (SiH₄), oxygen, and nitrogenas source gases. There is no particular limitation on the thickness ofthe gate insulating layer 138, but the thickness can be greater than orequal to 10 nm and less than or equal to 500 nm, for example. When astacked-layer structure is employed, the gate insulating layer 138 ispreferably formed by stacking a first gate insulating layer with athickness greater than or equal to 50 nm and less than or equal to 200nm and a second gate insulating layer with a thickness greater than orequal to 5 nm and less than or equal to 300 nm over the first gateinsulating layer.

Note that an oxide semiconductor which is made to be an i-type oxidesemiconductor or a substantially i-type oxide semiconductor by removingan impurity (an oxide semiconductor which is highly purified) isextremely sensitive to an interface energy levels or to the electriccharges trapping at the interface; therefore, when such an oxidesemiconductor is used for an oxide semiconductor layer, an interfacebetween the oxide semiconductor layer and a gate insulating layer isimportant. In other words, the gate insulating layer 138 which is to bein contact with the highly purified oxide semiconductor layer needs tobe of high quality.

For example, a high-density plasma CVD method using microwave (2.45 GHz)is favorable because a dense and high-quality gate insulating layer 138having high withstand voltage can be formed thereby. In this manner, thedensity of energy levels at the interface can be reduced and interfacecharacteristics can be favorable when the highly purified oxidesemiconductor layer and the high quality gate insulating layer are incontact with each other.

Needless to say, even when such a highly purified oxide semiconductorlayer is used, another method such as a sputtering method or a plasmaCVD method can be employed as long as an insulating layer having goodquality can be formed as the gate insulating layer. Alternatively, aninsulating layer whose film quality and interface characteristics aremodified by heat treatment after being formed may be applied. In anycase, a layer is acceptable which is of good quality as the gateinsulating layer 138, and which reduces interface state density betweenthe gate insulating layer and the oxide semiconductor layer so that agood interface is formed.

Moreover, when an impurity is contained in an oxide semiconductor, inthe bias temperature test (the BT test) at a temperature of 85° C. for12 hours with electric field strength of 2×10⁶ V/cm, bond betweenimpurities and the main components of the oxide semiconductor are cut bya strong electric field (B: bias) and a high temperature (T:temperature), and generated dangling bonds lead to a drift in thethreshold voltage (V_(th)).

On the other hand, a transistor which is stable even in the BT test canbe provided by removing impurities in the oxide semiconductor,especially hydrogen or water, and realizing good interfacecharacteristics between the gate insulating layer and the oxidesemiconductor layer as described above.

Then, an oxide semiconductor layer is formed over the gate insulatinglayer 138 and processed by a method such as etching using a mask so thatthe oxide semiconductor layer 140 having an island-shape is formed (seeFIG. 4E).

As the oxide semiconductor layer, an oxide semiconductor layer formedusing any of the following materials can be applied: four-componentmetal oxides such as In—Sn—Ga—Zn—O; three-component metal oxides such asIn—Ga—Zn—O, In—Sn—Zn—O, In—Al—Zn—O, Sn—Ga—Zn—O, Al—Ga—Zn—O, andSn—Al—Zn—O; two-component metal oxides such as In—Zn—O, Sn—Zn—O,Al—Zn—O, Zn—Mg—O, Sn—Mg—O, and In—Mg—O; single-component metal oxidessuch as In—O, Sn—O, and Zn—O. In addition, the above oxide semiconductormaterials may contain SiO₂.

As the oxide semiconductor layer, a thin film represented by InMO₃(ZnO)_(m) (m>0) can be used. Here, M represents one or more metalelements selected from Ga, Al, Mn, and Co. For example, M can be Ga, Gaand Al, Ga and Mn, Ga and Co, or the like. An oxide semiconductor filmwhich represented by InMO₃ (ZnO)_(m) (m>0), which includes Ga as M, isreferred to as an In—Ga—Zn—O-based oxide semiconductor, and a thin filmof the In—Ga—Zn—O-based oxide semiconductor is referred to as anIn—Ga—Zn—O-based oxide semiconductor film (an In—Ga—Zn—O-based amorphousfilm).

In this embodiment, as the oxide semiconductor layer, an amorphous oxidesemiconductor layer is formed by a sputtering method with the use of anIn—Ga—Zn—O-based oxide semiconductor target for film formation. Notethat by adding silicon to the amorphous oxide semiconductor layer,crystallization can be suppressed; therefore, the oxide semiconductorlayer may be formed using a target which contains SiO₂ at greater thanor equal to 2 wt. % and less than or equal to 10 wt. %.

As a target for forming the oxide semiconductor layer by a sputteringmethod, a metal oxide containing zinc oxide as a main component can beused, for example. As the oxide semiconductor target for film formationcontaining In, Ga, and Zn, a target having a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:1 (molar ratio) or the like can also be used.Alternatively, as the oxide semiconductor target for film formationcontaining In, Ga, and Zn, a target having a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2 (molar ratio) or a target having a compositionratio of In₂O₃:Ga₂O₃:ZnO=1:1:4 (molar ratio) can be used. The fillingrate of the oxide semiconductor target for film formation is greaterthan or equal to 90% and less than or equal to 100%, preferably greaterthan or equal to 95% (e.g., 99.9%). By using an oxide semiconductortarget for film formation whose filling rate is high, a dense oxidesemiconductor layer is formed.

An atmosphere for formation of the oxide semiconductor layer ispreferably a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically argon) andoxygen. Specifically, a high-purity gas, in which the concentration ofimpurities such as hydrogen, water, hydroxyl, and hydride is reduced toa concentration of approximately several parts per million (and evenbetter, to several parts per billion), is preferable.

At the time of forming the oxide semiconductor layer, the substrate isplaced in a treatment chamber which is kept in a reduced-pressure stateand the substrate temperature is higher than or equal to 100° C. andlower than or equal to 600° C., preferably, higher than or equal to 200°C. and lower than or equal to 400° C. By forming the oxide semiconductorlayer while the substrate is heated, the concentration of impuritiescontained in the oxide semiconductor layer can be reduced. In addition,damage due to sputtering is reduced. While moisture remaining in thetreatment chamber is removed, a sputtering gas from which hydrogen andmoisture are removed is introduced, and the oxide semiconductor layer isformed with use of metal oxide as a target. In order to remove remainingmoisture in the treatment chamber, a sorption vacuum pump is preferablyused. A cryopump, an ion pump, or a titanium sublimation pump can beused. The evacuation unit may be a turbo pump provided with a cold trap.A hydrogen atom, a compound containing a hydrogen atom, such as water(H₂O) (and also preferably a compound containing a carbon atom), or thelike is removed from the deposition chamber while reduced pressure ismaintained with the cryopump, thereby reducing the concentration ofimpurities contained in the oxide semiconductor layer formed in thedeposition chamber.

For example, the film formation conditions can be set as follows: thedistance between a substrate and a target is 100 mm; the pressure is 0.6Pa; the direct-current (DC) power is 0.5 kW; and the atmosphere is anoxygen atmosphere (the proportion of the oxygen flow rate is 100%). Itis preferable that a pulsed direct-current (DC) power supply be usedbecause powder substances (also referred to as particles or dust) can bereduced and the film thickness can be uniform. The thickness of theoxide semiconductor layer is greater than or equal to 2 nm and less thanor equal to 200 nm, preferably greater than or equal to 5 nm and lessthan or equal to 30 nm. Note that an appropriate thickness depends on anapplied oxide semiconductor material, and the thickness of the oxidesemiconductor layer may be set as appropriate depending on the material.

Note that before the oxide semiconductor layer is formed by a sputteringmethod, dust attached to a surface of the gate insulating layer 138 ispreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. Here, the reverse sputtering means amethod for improving the quality of a surface of the object to beprocessed by ions striking on the surface, while general sputtering isachieved by ions striking on a sputtering target. Methods for makingions strike the surface of the object to be processed include a methodin which a high frequency voltage is applied on the surface in an argonatmosphere and plasma is generated in the vicinity of the substrate.Note that a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used instead of the argon atmosphere.

For the etching of the oxide semiconductor layer, either dry etching orwet etching may be used. Needless to say, a combination of dry etchingand wet etching may be employed. The etching conditions (an etching gas,etching solution, etching time, temperature, or the like) are set asappropriate, depending on the material so that the oxide semiconductorlayer can be etched into a desired shape.

Examples of the etching gas for dry etching are a gas containingchlorine (a chlorine-based gas such as chlorine (Cl₂), boron trichloride(BCl₃), silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄))and the like. Alternatively, a gas containing fluorine (a fluorine-basedgas such as carbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆),nitrogen trifluoride (NF₃), or trifluoromethane (CHF₃)); hydrogenbromide (HBr); oxygen (O₂); any of these gases to which a rare gas suchas helium (He) or argon (Ar) is added; or the like may be used.

As a dry etching method, a parallel plate reactive ion etching (RIE)method or an inductively coupled plasma (ICP) etching method can beused. In order to etch the layer into a desired shape, the etchingconditions (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) are set as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, an ammonia hydrogen peroxide solution (31wt % hydrogen peroxide in water: 28 wt % ammonia water:water=5:2:2), orthe like can be used. Alternatively, ITO07N (manufactured by KantoChemical Co., Inc.) or the like may be used.

Then, the oxide semiconductor layer is preferably subjected to firstheat treatment. By this first heat treatment, the oxide semiconductorlayer can be dehydrated or dehydrogenated. The first heat treatment isperformed at a temperature higher than or equal to 300° C. and lowerthan or equal to 750° C., preferably, higher than or equal to 400° C.and lower than the strain point of the substrate. For example, thesubstrate is introduced into an electric furnace using a resistanceheating element or the like and the oxide semiconductor layer 140 issubjected to heat treatment in a nitrogen atmosphere at a temperature of450° C. for one hour. During this time, the oxide semiconductor layer140 is prevented from being exposed to the air so that entry of water orhydrogen is prevented.

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may include a device for heating an object to be processedby heat conduction or heat radiation given by a medium such as a heatedgas or the like. For example, a rapid thermal anneal (RTA) apparatussuch as a lamp rapid thermal anneal (LRTA) apparatus or a gas rapidthermal anneal (GRTA) apparatus can be used. An LRTA apparatus is anapparatus for heating an object to be processed by radiation of light(an electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas which does not react with an object to be processed by heattreatment, such as nitrogen or a rare gas such as argon is used.

For example, as the first heat treatment, GRTA may be performed asfollows. The substrate is placed in an inert gas which has been heatedto a high temperature of 650° C. to 700° C., heated for several minutes,and taken out from the inert gas. GRTA enables high-temperature heattreatment for a short time. In addition, such heat treatment isapplicable even when a temperature exceeds the strain point of thesubstrate because it takes only a short time.

Note that the first heat treatment is preferably performed in anatmosphere which contains nitrogen or a rare gas (e.g., helium, neon, orargon) as its main component and does not contain water, hydrogen, orthe like. For example, the purity of nitrogen or a rare gas (e.g.,helium, neon, or argon) introduced into the heat treatment apparatus isgreater than or equal to 6 N (99.9999%), preferably greater than orequal to 7 N (99.99999%) (that is, the concentration of impurities isless than or equal to 1 ppm, preferably less than or equal to 0.1 ppm).

In some cases, the oxide semiconductor layer might be crystallized to bea microcrystalline layer or a polycrystalline layer depending on thecondition of the first heat treatment or the material of the oxidesemiconductor layer. For example, the oxide semiconductor layer may becrystallized to become a microcrystalline oxide semiconductor layerhaving a degree of crystallization of greater than or equal to 90%, orgreater than or equal to 80%. Further, depending on the condition of thefirst heat treatment or the material of the oxide semiconductor layer,the oxide semiconductor layer may become an amorphous oxidesemiconductor layer containing no crystalline component.

The oxide semiconductor layer might become an oxide semiconductor layerin which a crystal (with a grain diameter greater than or equal to 1 nmand less than or equal to 20 nm, typically greater than or equal to 2 nmand less than or equal to 4 nm) is mixed in an amorphous oxidesemiconductor (e.g. at a surface of the oxide semiconductor layer).

In addition, electric characteristics of the oxide semiconductor layercan be changed by providing a crystal layer over the amorphous surfaceof the oxide semiconductor layer. For example, in the case of formingthe oxide semiconductor layer with the use of an In—Ga—Zn—O-based oxidesemiconductor target for the film formation, the electriccharacteristics of the oxide semiconductor layer can be changed byforming a crystal portion represented by In₂Ga₂ZnO₇ in which a crystalgrains are aligned and which exhibits electrical anisotropy.

More specifically, for example, by aligning the crystal grain in such amanner that the c-axis of In₂Ga₂ZnO₇ is oriented in a directionperpendicular to a surface of the oxide semiconductor layer,conductivity in a direction parallel to the surface of the oxidesemiconductor is improved, and an insulating property in the directionperpendicular to the surface of the oxide semiconductor layer can beincreased. Further, such a crystal portion has a function of suppressingentry of an impurity such as water or hydrogen into the oxidesemiconductor layer.

Note that the above oxide semiconductor layer which includes the crystalportion can be formed by heating a surface of the oxide semiconductorlayer by GRTA. When a sputtering target in which the amount of Zn issmaller than that of In or Ga is used, more favorable formation can beachieved.

The first heat treatment performed on the oxide semiconductor layer 140can be performed on the oxide semiconductor layer which has not yet beenprocessed into the island-shaped layer. In that case, after the firstheat treatment, the substrate is taken out of the heating apparatus anda photolithography step is performed.

Note that the above heat treatment can dehydrate or dehydrogenate theoxide semiconductor layer 140 and thus can be called dehydrationtreatment or dehydrogenation treatment. It is possible to perform suchdehydration treatment or dehydrogenation treatment at any timing, forexample, after the oxide semiconductor layer is formed, after the sourceor drain electrodes are stacked over the oxide semiconductor layer 140,or after a protective insulating layer is formed over the source ordrain electrodes. Such dehydration treatment or dehydrogenationtreatment may be performed more than once.

Next, the source or drain electrode 142 a and the source or drainelectrode 142 b are formed in contact with the oxide semiconductor layer140 (see FIG. 4F). The source or drain electrode 142 a and the source ordrain electrode 142 b can be formed in such a manner that a conductivelayer is formed so as to cover the oxide semiconductor layer 140 andthen selectively etched.

The conductive layer can be formed by a PVD method such as a sputteringmethod, a CVD method such as a plasma CVD method. As a material of theconductive layer, an element selected from aluminum, chromium, copper,tantalum, titanium, molybdenum, and tungsten, an alloy containing any ofthe above elements as its component, or the like can be used. Further, amaterial containing one or more elements selected from manganese,magnesium, zirconium, beryllium, and thorium as a component may be used.A material in which aluminum and one or more elements selected fromtitanium, tantalum, tungsten, molybdenum, chromium, neodymium, andscandium are combined is also applicable for the material of theconductive layer.

Alternatively, the conductive layer may be formed using conductive metaloxide. As conductive metal oxide, indium oxide (In₂O₃), tin oxide(SnO₂), zinc oxide (ZnO), indium oxide-tin oxide alloy (In₂O₃—SnO₂,which is abbreviated to ITO in some cases), indium oxide-zinc oxidealloy (In₂O₃—ZnO), or any of these metal oxide materials in whichsilicon or silicon oxide is contained can be used.

The conductive layer may have either a single-layer structure or astacked-layer structure of two or more layers. For example, asingle-layer structure of an aluminum film containing silicon, atwo-layer structure of an aluminum film and a titanium film stackedthereover, a three-layer structure in which a titanium film, an aluminumfilm, and a titanium film are stacked in this order, and the like can begiven.

Here, ultraviolet rays, a KrF laser beam, or an ArF laser beam arepreferably used for exposure for forming an etching mask.

The channel length (L) of the transistor is determined by a distancebetween a lower edge portion of the source or drain electrode 142 a overthe oxide semiconductor layer 140 and a lower edge portion of the sourceor drain electrode 142 b over the oxide semiconductor layer 140, asshown in FIG. 4E. In the case where exposure for a pattern in which thechannel length (L) is less than 25 nm, exposure for making a mask isperformed in the extreme ultraviolet range of several nanometers toseveral tens of nanometers which is extremely short wavelength. In theexposure using extreme ultraviolet light, the resolution is high and thefocus depth is large. Therefore, the channel length (L) of thetransistor to be formed later can be greater than or equal to 10 nm andless than or equal to 1000 nm, whereby operation speed of a circuit canbe increased. Further, off-state current of the transistor is extremelysmall, which prevents increase in power consumption.

Materials of the layers and etching conditions are adjusted asappropriate so that the oxide semiconductor layer 140 is not removedwhen the conductive layer is etched. Note that in some cases, the oxidesemiconductor layer 140 is partly etched in this step so as to be anoxide semiconductor layer having a groove (a depressed portion)depending on the materials and etching conditions.

An oxide conductive layer may be formed between the oxide semiconductorlayer 140 and the source or drain electrode 142 a, and between the oxidesemiconductor layer 140 and the source or drain electrode 142 b. Anoxide conductive layer and the conductive layer for forming the sourceor drain electrode 142 a and the source or drain electrode 142 b can beformed in immediate succession (successive deposition). The oxideconductive layer can function as a source region or a drain region. Byproviding such an oxide conductive layer, resistance of the source anddrain regions can be reduced and high-speed operation of the transistorcan be realized.

In order to reduce the number of the masks and steps, etching may beperformed with the use of a resist mask formed using a multi-tone maskwhich is a light-exposure mask through which light is transmitted so asto have a plurality of intensities. A resist mask formed with the use ofa multi-tone mask has a shape with a plurality of thicknesses (astep-like shape) and further can be changed in shape by ashing;therefore, the resist mask can be used in a plurality of etching stepsfor processing into different patterns. That is, a resist maskcorresponding to at least two or more kinds of different patterns can beformed by one multi-tone mask. Thus, the number of light-exposure maskscan be reduced and the number of corresponding photolithography stepscan be also reduced, whereby simplification of a process can berealized.

Note that plasma treatment using a gas such as N₂O, N₂, or Ar ispreferably performed after the above step. By this plasma treatment,water attached to a surface of the oxide semiconductor layer which isexposed is removed. Alternatively, plasma treatment may be performedusing a gas containing oxygen such as a mixed gas of oxygen and argon.In this manner, the oxide semiconductor layer is supplied with oxygenand defects resulted from oxygen deficiency can be reduced.

After that, the protective insulating layer 144 which is in contact withpart of the oxide semiconductor layer 140 is formed without exposure tothe air (see FIG. 4G).

The protective insulating layer 144 can be formed by appropriatelyemploying a method such as a sputtering method, by which an impuritysuch as water or hydrogen is prevented from entering the protectiveinsulating layer 144. The protective insulating layer 144 is formed to athickness greater than or equal to 1 nm. As a material which can be usedfor the protective insulating layer 144, there are silicon oxide,silicon nitride, silicon oxynitride, silicon nitride oxide, and thelike. The protective insulating layer 144 may have a single-layerstructure or a stacked structure. The substrate temperature forformation of the protective insulating layer 144 is preferably higherthan or equal to room temperature and lower than or equal to 300° C. Theatmosphere for formation of the protective insulating layer 144 ispreferably a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically argon) andoxygen.

Presence of hydrogen in the protective insulating layer 144 causes entryof the hydrogen to the oxide semiconductor layer, extraction of oxygenin the oxide semiconductor layer by the hydrogen, or the like, and theresistance of the backchannel side of the oxide semiconductor layer ismade low, which may form a parasitic channel. Therefore, it is importantthat a formation method in which hydrogen is not used is employed sothat the protective insulating layer 144 contains as little hydrogen aspossible.

In addition, it is preferable that the protective insulating layer 144be formed while remaining moisture in the treatment chamber is removed.This is for preventing hydrogen, hydroxyl, or water from being containedin the oxide semiconductor layer 140 and the protective insulating layer144.

In order to remove remaining moisture in the treatment chamber, asorption vacuum pump is preferably used. A cryopump, an ion pump, or atitanium sublimation pump is preferably used. The evacuation unit may bea turbo pump provided with a cold trap. A hydrogen atom, a compoundcontaining a hydrogen atom, such as water (H₂O), or the like is removedfrom the deposition chamber which is evacuated with the cryopump,thereby reducing the concentration of impurities contained in theprotective insulating layer 144 formed in the deposition chamber.

As a sputtering gas used in formation of the protective insulating layer144, a high-purity gas from which an impurity such as hydrogen, water,hydroxyl, or hydride is reduced to a concentration of approximatelyseveral parts per million (preferably several parts per billion) ispreferably used.

Next, second heat treatment (preferably at a temperature higher than orequal to 200° C. and lower than or equal to 400° C., for example, higherthan or equal to 250° C. and lower than or equal to 350° C.) in an inertgas atmosphere or an oxygen atmosphere is preferably performed. Forexample, the second heat treatment is performed in a nitrogen atmosphereat 250° C. for one hour. The second heat treatment can reduce variationin the electric characteristics of the thin film transistor. Further,the oxide semiconductor layer can be supplied with oxygen by the secondheat treatment.

Further, an additional heat treatment may be performed at a temperaturehigher than or equal to 100° C. and lower than or equal to 200° C. forone hour or more and 30 hours or less in the air. This heat treatmentmay be performed at a fixed temperature. Alternatively, the followingtemperature cycle may be applied plural times repeatedly: thetemperature is increased from room temperature to a temperature higherthan or equal to 100° C. and lower than or equal to 200° C. and thendecreased to room temperature. Further, this heat treatment may beperformed under a reduced pressure before formation of the protectiveinsulating layer. The reduced pressure allows the heat treatment time tobe short. Note that this heat treatment may be performed instead of thesecond heat treatment; alternatively, this heat treatment may beperformed before and/or after the second heat treatment is performed.

Then, the interlayer insulating layer 146 is formed over the protectiveinsulating layer 144 (see FIG. 5A). The interlayer insulating layer 146can be formed by a PVD method, a CVD method, or the like. A materialcontaining an inorganic insulating material such as silicon oxide,silicon nitride oxide, silicon nitride, hafnium oxide, aluminum oxide,or tantalum oxide can be used for the interlayer insulating layer 146.Further, a surface of the interlayer insulating layer 146 is preferablysubjected to CMP, etching, or the like so as to be flattened after theinterlayer insulating layer 146 is formed.

Next, openings reaching the electrodes 136 a, 136 b, and 136 c, thesource or drain electrode 142 a, and the source or drain electrode 142 bare formed in the interlayer insulating layer 146, the protectiveinsulating layer 144, and the gate insulating layer 138; then, aconductive layer 148 is formed so as to fill the openings (see FIG. 5B).The above openings can be formed by etching with the use of a mask, forexample. The mask can be formed by exposure using a photomask, forexample. For the etching, either wet etching or dry etching may beperformed but dry etching is preferable in view of the fine patterning.The conductive layer 148 can be formed by a film formation method suchas a PVD method or a CVD method. Examples of a material for theconductive layer 148 include a conductive material such as molybdenum,titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, andscandium, an alloy of any of these, and a compound containing any ofthese (e.g., nitride of any of these).

Specifically, for example, the conductive layer 148 can be formed asfollows: a titanium film is formed to have a small thickness by a PVDmethod in a region including the openings and a titanium nitride film isthen formed to have a small thickness by a CVD method; and then, atungsten film is formed so as to fill the openings. Here, the titaniumfilm formed by a PVD method has a function of reducing an oxide film atan interface with an electrode in a lower portion (here, the electrodes136 a, 136 b, and 136 c, the source or drain electrode 142 a, the sourceor drain electrode 142 b, or the like), so that contact resistance withthe electrode in a lower portion is reduced. In addition, thesubsequently formed titanium nitride film has a barrier property suchthat diffusion of a conductive material is prevented. Further, after abarrier film is formed using titanium, titanium nitride, or the like, acopper film may be formed by a plating method.

After the conductive layer 148 is formed, part of the conductive layer148 is removed by etching, CMP, or the like so that the interlayerinsulating layer 146 is exposed and the electrodes 150 a, 150 b, 150 c,150 d and 150 e are formed (see FIG. 5C). Note that when the electrodes150 a, 150 b, 150 c, 150 d and 150 e are formed by removing part of theabove conductive layer 148, processing is preferably performed to obtainflattened surfaces. By flattening surfaces of the interlayer insulatinglayer 146 and the electrodes 150 a, 150 b, 150 c, 150 d and 150 e,electrodes, wirings, insulating layers, semiconductor layers, and thelike can be favorably formed in a later step.

Further, the insulating layer 152 is formed and openings reaching theelectrodes 150 a, 150 b, 150 c, 150 d and 150 e are formed in theinsulating layer 152; then, a conductive layer is formed so as to fillthe openings. After that, part of the conductive layer is removed byetching, CMP, or the like so that the insulating layer 152 is exposedand the electrodes 154 a, 154 b, 154 c, and 154 d are formed (see FIG.5D). This step is similar to that of forming the electrode 150 a and thelike; therefore, detailed description is omitted here.

When the transistor 162 is manufactured in the above-described manner,the hydrogen concentration of the oxide semiconductor layer 140 is lessthan or equal to 5×10¹⁹/cm³ and off-state current of the transistor 162is less than or equal to 1×10⁻¹³ A. Thus, the transistor 162 havingexcellent characteristics can be obtained by employing the highlypurified oxide semiconductor layer 140 in which the hydrogenconcentration is sufficiently reduced and defects resulted from oxygendeficiency are reduced. In addition, a semiconductor device havingexcellent characteristics which includes the transistor 160 using amaterial other than an oxide semiconductor in a lower portion and thetransistor 162 using an oxide semiconductor in an upper portion can bemanufactured.

Note that although many researches on a physical property of density ofstate (DOS) or the like in an oxide semiconductor have been conducted,they do not suggest an idea of substantially reducing density oflocalized energy levels in an energy gap. In one embodiment of thedisclosed invention, water or hydrogen which induces localized energylevels is removed from an oxide semiconductor, whereby a highly purifiedoxide semiconductor is manufactured. This is based on an idea ofsubstantially reducing localized energy levels and realizing manufactureof excellent industrial products.

Note that when hydrogen, water, or the like is removed, oxygen is alsoremoved in some cases. Therefore, it is favorable that an oxidesemiconductor be further purified (made to be an i-type oxidesemiconductor) by supplying oxygen to dangling bonds of metal which aregenerated by oxygen deficiency so that localized energy levels resultingfrom oxygen deficiency are reduced. For example, localized statesresulted from oxygen deficiency can be reduced in the following manner:an oxide film having oxygen in excess is formed in close contact with achannel formation region; and heat treatment at 200° C. to 400° C.,typically, approximately 250° C., is performed so that oxygen issupplied to the oxide semiconductor from the oxide film. Further, aninert gas may be changed to a gas containing oxygen during the secondheat treatment. An oxide semiconductor can be supplied with oxygen bybeing subjected to a temperature decreasing step in an oxygen atmosphereor an atmosphere from which hydrogen, water, or the like is sufficientlyreduced, after the second heat treatment.

It can be considered that a factor of deterioration of characteristicsof an oxide semiconductor is a shallow level resulted from excessivehydrogen at 0.1 eV to 0.2 eV below the conduction band, a deep levelresulted from oxygen deficiency, or the like. A technical idea ofthoroughly removing hydrogen and sufficiently supplying oxygen in orderto correct these defects ought to be valid.

In the disclosed invention, since an oxide semiconductor is highlypurified, carrier concentration of the oxide semiconductor issufficiently low.

With the use of Fermi-Dirac distribution function at normal temperature,intrinsic carrier density of an oxide semiconductor having an energy gapat 3.05 eV to 3.15 eV is 1×10⁻⁷/cm³, which is much lower than intrinsiccarrier density of 1.45×10¹⁰/cm³ of silicon.

Accordingly, the number of holes that are minority carriers is extremelysmall. Leakage current of an insulated gate field effect transistor(IGFET) in an off-state with less than or equal to 100 aA/μm at normaltemperature, preferably, less than or equal to 10 aA/μm, or morepreferably less than or equal to 1 aA/μm can be realized. Note that “1aA/μm” means that flowing current per micrometer of channel width of atransistor is 1 aA (1×10⁻¹⁸ A).

In fact, SiC (3.26 eV), GaN (3.42 eV), and the like are known assemiconductors having a wide energy gap greater than or equal to 3 eV.Transistor characteristics similar to the above describedcharacteristics are expected to be obtained with the use of thesesemiconductors. However, it is practically impossible to form a thinfilm of these semiconductor materials because they need a processtemperature higher than or equal to 1500° C. In addition, the processtemperature is so high that these materials cannot be stacked in threedimensions over a silicon integrated circuit. On the other hand, anoxide semiconductor can be deposited as a thin film by sputtering atroom temperature to 400° C. and can be dehydrated or dehydrogenated(removal of hydrogen or water from an oxide semiconductor layer) andsupplied with oxygen (supply of oxygen to an oxide semiconductor layer)at 450° C. to 700° C.; thus, an oxide semiconductor can be stacked inthree dimensions over a silicon integrated circuit.

Note that although an oxide semiconductor generally has n-typeconductivity, in one embodiment of the disclosed invention, an oxidesemiconductor is made to be an i-type oxide semiconductor by removing animpurity such as water or hydrogen and supplying oxygen that is acomponent of the oxide semiconductor. From this aspect, different fromthe case of silicon which is made to be an i-type silicon by adding animpurity, one embodiment of the disclosed invention includes a noveltechnical idea.

Note that in this embodiment, the case where the transistor 162 usingthe oxide semiconductor is a bottom gate type is described; however, thepresent invention is not limited thereto. The structure of thetransistor 162 may be a top gate type or a dual gate type. A dual gatetype transistor refers to a transistor including two gate electrodesformed above and below a channel region with a gate insulating layerinterposed therebetween.

<Electrical Conduction Mechanism of Transistor Using OxideSemiconductor>

Here, the electrical conduction mechanism of the transistor using anoxide semiconductor is described with reference to FIG. 6, FIG. 7, FIGS.8A and 8B, and FIG. 9. Note that the description below is onlyconsideration and the effect of one embodiment of the disclosedinvention is not denied thereby.

FIG. 6 is a cross-sectional view illustrating a dual gate typetransistor (a thin film transistor) using an oxide semiconductor. Anoxide semiconductor layer (OS) is provided over a gate electrode (GE)with a gate insulating layer (GI) therebetween and a source electrode(S) and a drain electrode (D) are provided thereover. An insulatinglayer is provided so as to cover the source electrode (S) and the drainelectrode (D).

FIG. 7 represents an energy band diagram (schematic view) correspondingto a cross-section taken along line A-A′ in FIG. 6. In FIG. 7, a blackcircle (●) and a white circle (◯) represent an electron and a hole andhave electric charges (−q, +q), respectively.

With a positive voltage (V_(D)>0) applied to the drain electrode, thedashed line shows the case where no voltage is applied to the gateelectrode (V_(G)=0) and the solid line shows the case where a positivevoltage is applied to the gate electrode (V_(G)>0). In the case where novoltage is applied to the gate electrode, carriers (electrons) are notinjected to the oxide semiconductor side from an electrode because of ahigh potential barrier, so that a current does not flow, which means anoff state. On the other hand, when a positive voltage is applied to thegate electrode, potential barrier is lowered, and thus a current flows,which means an on state.

FIGS. 8A and 8B are energy band diagrams (schematic views) eachcorresponding to a cross-section taken along line B-B′ in FIG. 6. FIG.8A illustrates an on state in which a positive voltage (V_(G)>0) isapplied to the gate electrode (GE) and carriers (electrons) flow betweenthe source electrode and the drain electrode. FIG. 8B illustrates an offstate in which a negative voltage (V_(G)<0) is applied to the gateelectrode (GE) and minority carriers do not flow.

FIG. 9 is a diagram illustrating the relationship between the vacuumlevel and the work function of a metal (φM) and the relationship betweenthe vacuum level and the electron affinity (χ) of an oxidesemiconductor.

At normal temperature, electrons in the metal are in degenerate statesand the Fermi level is located in the conduction band. On the otherhand, a conventional oxide semiconductor is an n-type semiconductor, inwhich the Fermi level (E_(F)) is away from the intrinsic Fermi level(E_(i)) located in the middle of a band gap and is located closer to theconduction band. Note that it is known that hydrogen is a donor in anoxide semiconductor and is one factor causing an oxide semiconductor tobe an n-type semiconductor.

On the other hand, an oxide semiconductor according to one embodiment ofthe disclosed invention is made to be an intrinsic (i-type) or extremelyclose to an intrinsic oxide semiconductor by removal of hydrogen that isa factor which makes the oxide semiconductor have n-type conductivity soas to be highly purified in such a manner that elements (impurityelements) that are not main components thereof are contained as littleas possible. In other words, the oxide semiconductor according to oneembodiment of the disclosed invention is not an oxide semiconductorwhich is made to be an i-type oxide semiconductor by adding an impurityelement but an i-type (intrinsic) or almost i-type oxide semiconductorwhich is highly purified by removing an impurity such as hydrogen orwater as much as possible. In this manner, the Fermi level (E_(f)) canbe extremely close to the intrinsic Fermi level (E_(i)).

It is said that when a band gap (E_(g)) of an oxide semiconductor is3.15 eV, electron affinity (χ) thereof is 4.3 eV. The work function oftitanium (Ti) contained in the source and drain electrodes is almostequivalent to the electron affinity (χ) of the oxide semiconductor. Inthat case, at an interface between the metal and the oxidesemiconductor, a Schottky barrier against an electron passage is notformed.

At that time, the electron moves in the vicinity of the interfacebetween the gate insulating layer and the highly purified oxidesemiconductor (the lowest portion of the oxide semiconductor which isstable in terms of energy) as illustrated in FIG. 8A.

In addition, as illustrated in FIG. 8B, when a negative potential isapplied to the gate electrode (GE), the current value is extremely closeto zero because holes that are minority carriers are substantiallynonexistent.

In such a manner, an intrinsic (i-type) or substantially intrinsic oxidesemiconductor is obtained by being highly purified such that an elementother than its main element (i.e., an impurity element) is contained aslittle as possible. Thus, characteristics of the interface between theoxide semiconductor and the gate insulating layer become obvious. Forthat reason, the gate insulating layer needs to be able to form afavorable interface with the oxide semiconductor. Specifically, it ispreferable to use, for example, an insulating layer formed by a CVDmethod using high-density plasma generated with a power supply frequencyin the range of the VHF band to the microwave band, an insulating layerformed by a sputtering method, or the like.

When the oxide semiconductor is highly purified and the interfacebetween the oxide semiconductor and the gate insulating layer is madefavorable, in the case where the transistor has a channel width (W) of1×10⁴ μm and a channel length (L) of 3 μm, for example, it is possibleto realize an off-state current of 10⁻¹³ A or less and a subthresholdswing (S value) of 0.1 V/dec. (with a 100-nm-thick gate insulatinglayer).

The oxide semiconductor is highly purified as described above so as tocontain an element other than its main element (i.e., an impurityelement) as little as possible, so that the transistor can operate in afavorable manner.

<Carrier Concentration>

In a technical idea according to the disclosed invention, an oxidesemiconductor layer is made as close as possible to an intrinsic(i-type) oxide semiconductor layer by sufficiently reducing carrierconcentration thereof. Hereinafter, a method for calculating the carrierconcentration and carrier concentration actually measured are describedwith reference to FIG. 10 and FIG. 11.

First, a method for calculating the carrier concentration is easilyexplained. The carrier concentration can be calculated in such a mannerthat an MOS capacitor is manufactured and results of CV measurement (CVcharacteristics) of the MOS capacitor are evaluated.

Specifically, carrier concentration N_(d) is calculated in the followingmanner: C-V characteristics are obtained by plotting relations between agate voltage (V_(g)) and a capacitance (C) of an MOS capacitor; a graphof a relation between the gate voltage V_(g) and (1/C)² is obtained withthe use of the C—V characteristics; a differential value of (1/C)² in aweak inversion region of the graph is found; and the differential valueis substituted into Formula 1. Note that e, ε₀, and ε in Formula 1represent elementary electric charge, vacuum permittivity, and relativepermittivity of an oxide semiconductor, respectively.

$\begin{matrix}{\lbrack {{Formula}\mspace{14mu} 1} \rbrack\mspace{616mu}} & \; \\{N_{d} = {{- ( \frac{2}{e\; ɛ_{0}ɛ} )}/\frac{\mathbb{d}( {1/C} )^{2}}{\mathbb{d}V}}} & (1)\end{matrix}$

Next, measurement of actual carrier concentration corresponding to thatcalculated by the above method is described. For the measurement, asample (a MOS capacitor) which was formed as follows was used: atitanium film was formed to a thickness of 300 nm over a glasssubstrate; a titanium nitride film was formed to a thickness of 100 nmover the titanium film; an oxide semiconductor layer using anIn—Ga—Zn—O-based oxide semiconductor was formed to a thickness of 2 μmover the titanium nitride film; and a silver film was formed to athickness of 300 nm over the oxide semiconductor layer. Note that theoxide semiconductor layer was formed using an oxide semiconductor targetcontaining In, Ga, and Zn (In₂O₃:Ga₂O₃:ZnO=1:1:1 (molar ratio)) by asputtering method. Further, a formation atmosphere of the oxidesemiconductor layer was a mixed atmosphere of argon and oxygen (a flowratio was Ar:O₂=30 (sccm):15 (sccm)).

The C-V characteristics and the relation between the gate voltage(V_(g)) and (1/C)² are illustrated in FIG. 10 and FIG. 11, respectively.The carrier concentration calculated using Formula 1 from thedifferential value of (1/C)² in a weak inversion region of the graph ofFIG. 11 was 6.0×10¹⁰/cm³.

As described above, by using an oxide semiconductor which is made to bean i-type or substantially i-type oxide semiconductor (for example,carrier concentration is less than or equal to 1×10¹²/cm³, preferably,less than or equal to 1×10¹¹/cm³), a transistor which has extremelyfavorable off-state current characteristics can be obtained.

<Examples of Variations>

Examples of variations of a structure of a semiconductor device aredescribed with reference to FIG. 12, FIGS. 13A and 13B, FIGS. 14A and14B, and FIGS. 15A and 15B. Note that in the following examples, thestructure of the transistor 162 is different from that alreadydescribed. However, the structure of the transistor 160 is similar tothat already described.

In an example illustrated in FIG. 12, a semiconductor device includingthe transistor 162 having the gate electrode 136 d under the oxidesemiconductor layer 140 and the source or drain electrode 142 a and thesource or drain electrode 142 b which are in contact with the oxidesemiconductor layer 140 at a bottom surface of the oxide semiconductorlayer 140. Since a plan structure may be appropriately changedcorresponding to a cross-sectional structure, only the cross-sectionalstructure is described here.

As an important difference between the structure illustrated in FIG. 12and that illustrated in FIGS. 2A and 2B, there are connection positionswhere the source or drain electrode 142 a and the source or drainelectrode 142 b are connected to the oxide semiconductor layer 140. Thatis, in the structure illustrated in FIGS. 2A and 2B, the source or drainelectrode 142 a and the source or drain electrode 142 b are in contactwith a top surface of the oxide semiconductor layer 140; on the otherhand, in the structure illustrated in FIG. 12, the source or drainelectrode 142 a and the source or drain electrode 142 b are in contactwith the bottom surface of the oxide semiconductor layer 140. Inaddition, resulting from this difference in contact positions, aposition of another electrode, another insulating layer, or the like ischanged. As for details of each component, FIGS. 2A and 2B can bereferred to.

Specifically, the semiconductor device includes: the gate electrode 136d provided over the interlayer insulating layer 128; the gate insulatinglayer 138 provided over the gate electrode 136 d; the source or drainelectrode 142 a and the source or drain electrode 142 b which areprovided over the gate insulating layer 138; and the oxide semiconductorlayer 140 in contact with top surfaces of the source or drain electrode142 a and the source or drain electrode 142 b.

Here, the gate electrode 136 d is provided so as to be embedded in theinsulating layer 132 which is formed over the interlayer insulatinglayer 128. Furthermore, similarly to the gate electrode 136 d, anelectrode 136 a, an electrode 136 b, and an electrode 136 c are formedin contact with the source or drain electrode 130 a, the source or drainelectrode 130 b, and the electrode 130 c, respectively.

In addition, over the transistor 162, a protective insulating layer 144is provided in contact with part of the oxide semiconductor layer 140.An interlayer insulating layer 146 is provided over the protectiveinsulating layer 144. Here, in the protective insulating layer 144 andthe interlayer insulating layer 146, openings reaching the source ordrain electrode 142 a and the source or drain electrode 142 b areformed. In the openings, the electrode 150 d and the electrode 150 e areformed to be in contact with the source or drain electrode 142 a and thesource or drain electrode 142 b, respectively. Similarly to theelectrodes 150 d and 150 e, the electrode 150 a, the electrode 150 b,and the electrode 150 c are formed to be in contact with the electrode136 a, the electrode 136 b, and the electrode 136 c, respectively, inopenings provided in the gate insulating layer 138, the protectiveinsulating layer 144, and the interlayer insulating layer 146.

Furthermore, the insulating layer 152 is provided over the interlayerinsulating layer 146. The electrode 154 a, the electrode 154 b, theelectrode 154 c, and the electrode 154 d are provided so as to beembedded in the insulating layer 152. Here, the electrode 154 a is incontact with the electrode 150 a; the electrode 154 b, the electrode 150b; the electrode 154 c, the electrodes 150 c and 150 d; and theelectrode 154 d, the electrode 150 e.

FIGS. 13A and 13B each illustrate an example in which the gate electrode136 d is provided over the oxide semiconductor layer 140. Here, FIG. 13Aillustrates an example in which the source or drain electrode 142 a andthe source or drain electrode 142 b are in contact with the oxidesemiconductor layer 140 at the bottom surface of the oxide semiconductorlayer 140; and FIG. 13B illustrates an example in which the source ordrain electrode 142 a and the source or drain electrode 142 b are incontact with the oxide semiconductor layer 140 at the top surface of theoxide semiconductor layer 140.

The structures of FIGS. 13A and 13B are largely different from those ofFIGS. 2A and 2B and FIG. 12 in that the gate electrode 136 d is providedover the oxide semiconductor layer 140. Further, an important differencebetween the structure in FIG. 13A and the structure in FIG. 13B is thatwhich of the bottom surface or the top surface of the oxidesemiconductor layer 140 the source and drain electrodes 142 a and 142 bare in contact with. Furthermore, resulting from these differences, aposition of another electrode, another insulating layer, or the like ischanged. As for details of each component, FIGS. 2A and 2B or otherdrawings can be referred to.

Specifically, in FIG. 13A, the semiconductor device includes: the sourceor drain electrode 142 a and the source or drain electrode 142 b whichare provided over the interlayer insulating layer 128; the oxidesemiconductor layer 140 which is in contact with the top surfaces of thesource or drain electrode 142 a and the source or drain electrode 142 b;the gate insulating layer 138 provided over the oxide semiconductorlayer 140; and the gate electrode 136 d over a region of the gateinsulating layer 138 which is overlapped with the oxide semiconductorlayer 140.

In FIG. 13B, the semiconductor device includes: the oxide semiconductorlayer 140 provided over the interlayer insulating layer 128; the sourceor drain electrode 142 a and the source or drain electrode 142 b whichare provided in contact with the top surface of the oxide semiconductorlayer 140; the gate insulating layer 138 provided over the oxidesemiconductor layer 140, the source or drain electrode 142 a, and thesource or drain electrode 142 b; and the gate electrode 136 d over aregion of the gate insulating layer 138 which is overlapped with theoxide semiconductor layer 140.

Note that in the structures illustrated in FIGS. 13A and 13B, acomponent (e.g., the electrode 150 a, the electrode 154 a, or the like)which the structure illustrated in FIGS. 2A and 2B or the like has canbe omitted in some cases. In such a case, simplification of themanufacturing process can be achieved secondarily. Needless to say, acomponent which is not essential can be omitted also in the structureillustrated in FIGS. 2A and 2B or the like.

FIGS. 14A and 14B each illustrate an example of a structure in which thesemiconductor device has a relatively large size and the gate electrode136 d is provided under the oxide semiconductor layer 140. In this case,a wiring, an electrode, or the like does not need to be formed so as tobe embedded in the insulating layer because flatness or coverage of asurface is not needed to be extremely high. For example, the gateelectrode 136 d and the like can be formed in such a manner that aconductive layer is formed and then patterned. Note that although notillustrated, the transistor 160 can be manufactured similarly.

An important difference between the structure in FIG. 14A and thestructure in FIG. 14B is that which of the bottom surface or the topsurface of the oxide semiconductor layer 140 the source and drainelectrodes 142 a and 142 b are in contact with. In addition, resultingfrom this difference, a position of another electrode, anotherinsulating layer, or the like is changed. As for details of eachcomponent, FIGS. 2A and 2B or other drawings can be referred to.

Specifically, in FIG. 14A, the semiconductor device includes: the gateelectrode 136 d provided over the interlayer insulating layer 128; thegate insulating layer 138 provided over the gate electrode 136 d; thesource or drain electrode 142 a and the source or drain electrode 142 bwhich are provided over the gate insulating layer 138; and the oxidesemiconductor layer 140 in contact with the top surfaces of the sourceor drain electrode 142 a and the source or drain electrode 142 b.

In FIG. 14B, the semiconductor device includes: the gate electrode 136 dprovided over the interlayer insulating layer 128; the gate insulatinglayer 138 provided over the gate electrode 136 d; the oxidesemiconductor layer 140 provided over the gate insulating layer 138 soas to overlap with the gate electrode 136 d; and the source or drainelectrode 142 a and the source or drain electrode 142 b which areprovided in contact with the top surface of the oxide semiconductorlayer 140.

Note that a component which the structure illustrated in FIGS. 2A and 2Bor the like are omitted in some cases also in the structures illustratedin FIGS. 14A and 14B. Also in this case, simplification of themanufacturing process can be achieved.

FIGS. 15A and 15B each illustrate an example of a structure in which thesemiconductor device has a relatively large size and the gate electrode136 d is provided over the oxide semiconductor layer 140. Also in thiscase, a wiring, an electrode, or the like does not need to be formed soas to be embedded in the insulating layer because flatness or coverageof a surface is not needed to be extremely high. For example, the gateelectrode 136 d and the like can be formed in such a manner that aconductive layer is formed and then patterned. Note that although notillustrated, the transistor 160 can be manufactured similarly.

An important difference between the structure in FIG. 15A and thestructure in FIG. 15B is that which of the bottom surface or the topsurface of the oxide semiconductor layer 140 the source and drainelectrodes 142 a and 142 b are in contact with. In addition, resultingfrom this difference, a position of another electrode, anotherinsulating layer, or the like is changed. As for details of eachcomponent, FIGS. 2A and 2B or other drawings can be referred to.

Specifically, in FIG. 15A, the semiconductor device includes: the sourceor drain electrode 142 a and the source or drain electrode 142 b whichare provided over the interlayer insulating layer 128; the oxidesemiconductor layer 140 which is in contact with the top surfaces of thesource or drain electrode 142 a and the source or drain electrode 142 b;the gate insulating layer 138 provided over the source or drainelectrode 142 a, the source or drain electrode 142 b, and the oxidesemiconductor layer 140; and the gate electrode 136 d over a region ofthe gate insulating layer 138 which is overlapped with the oxidesemiconductor layer 140.

In FIG. 15B, the semiconductor device includes: the oxide semiconductorlayer 140 provided over the interlayer insulating layer 128; the sourceor drain electrode 142 a and the source or drain electrode 142 b whichare provided in contact with the top surface of the oxide semiconductorlayer 140; the gate insulating layer 138 provided over the source ordrain electrode 142 a, the source or drain electrode 142 b, and theoxide semiconductor layer 140; and the gate electrode 136 d over aregion of the gate insulating layer 138 which is overlapped with theoxide semiconductor layer 140.

Note that a component which the structure illustrated in FIGS. 2A and 2Bor the like has can be omitted in some cases also in the structuresillustrated in FIGS. 15A and 15B. Also in this case, simplification ofthe manufacturing process can be achieved.

As described above, according to one embodiment of the disclosedinvention, a semiconductor device having a new structure is realized.Although the transistor 160 and the transistor 162 are stacked in thisembodiment, the structure of the semiconductor device is not limitedthereto. Further, although an example in which the channel lengthdirection of the transistor 160 and that of the transistor 162 areperpendicular to each other is described, the positions of thetransistors 160 and 162 are not limited to this. In addition, thetransistors 160 and 162 may be provided to overlap with each other.

Note that although in this embodiment a semiconductor device per minimumstorage unit (one bit) is described for easy understanding, thestructure of the semiconductor device is not limited to this. A moredeveloped semiconductor device can be formed by appropriately connectinga plurality of semiconductor devices. For example, it is possible tomake a NAND-type or NOR-type semiconductor device by using a pluralityof the above described semiconductor devices. The structure of thewiring is not limited to that illustrated in FIG. 1 and can be changedas appropriate.

In the semiconductor device according to this embodiment, the lowoff-state current characteristics of the transistor 162 enableinformation to be held for an extremely long time. In other words,refreshing operation, which is needed in DRAM memories and the like, isnot necessary; thus, power consumption can be suppressed. In addition,the semiconductor device can be substantially used as a nonvolatilememory.

Since information is written by switching operation of the transistor162, high voltage is not needed and an element is not deteriorated inthe semiconductor device. Further, information is written or erasedaccording to an on state and an off state of the transistor, wherebyhigh-speed operation can be easily realized. Moreover, there is anadvantage in that operation for erasing information which is necessaryin flash memory and the like is not needed.

Furthermore, a transistor using a material other than an oxidesemiconductor can operate at sufficiently high speed; thus, high-speedreading of stored content can be realized by using the semiconductordevice.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Embodiment 2

In this embodiment, a circuit configuration and operation of asemiconductor device according to one embodiment of the presentinvention will be described.

An example of a circuit diagram of a memory element (hereinafter alsoreferred to as a memory cell) including the semiconductor device isillustrated in FIG. 16. A memory cell 200 illustrated in FIG. 16 is amulti-valued memory cell and includes a source line SL, a bit line BL, afirst signal line S1, a second signal line S2, a word line WL, atransistor 201, a transistor 202, a transistor 203, and a capacitor 205.The transistors 201 and 203 are formed using a material other than anoxide semiconductor, and the transistor 202 is formed using an oxidesemiconductor.

Here, a gate electrode of the transistor 201 is electrically connectedto one of a source electrode and a drain electrode of the transistor202. In addition, the source line SL is electrically connected to asource electrode of the transistor 201, and a source electrode of thetransistor 203 is electrically connected to a drain electrode of thetransistor 201. The bit line BL is electrically connected to a drainelectrode of the transistor 203, and the first signal line S1 iselectrically connected to the other of the source electrode and thedrain electrode of the transistor 202. The second signal line S2 iselectrically connected to a gate electrode of the transistor 202, andthe word line WL is electrically connected to a gate electrode of thetransistor 203. Additionally, one of electrodes of the capacitor 205 iselectrically connected to the gate electrode of the transistor 201 andone of the source electrode and the drain electrode of the transistor202. The other of the electrodes of the capacitor 205 is supplied with apredetermined potential, for example, GND.

Next, operation of the memory cell 200 illustrated in FIG. 16 isdescribed. In the case where the memory cell 200 is a four-valued memorycell is described. Four states of the memory cell 200 are set to data“00b”, “01b”, “10b”, and “11b”, and respective potentials of a node A atthat time are set to V₀₀, V₀₁, V₁₀, and V₁₁ (V₀₀<V₀₁<V₁₀<V₁₁),respectively.

When writing is performed to the memory cell 200, the source line SL isset to 0 [V], the word line WL is set to 0 [V], the bit line BL is setto 0 [V], and the second signal line S2 is set to 2 [V]. When the data“00b” is to be written, the first signal line S1 is set to V₀₀ [V]. Whenthe data “01b” is to be written, the first signal line S1 is set to V₀₁[V]. When the data “10b” is to be written, the first signal line S1 isset to V₁₀ [V]. When the data “11b” is to be written, the first signalline S1 is set to V₁₁ [V]. At this time, the transistor 203 is put in anoff state and the transistor 202 is put in an on state. Note that whenwriting data is completed, the second signal line S2 is set to 0 [V] soas to turn off the transistor 202, before a potential of the firstsignal line S1 is changed.

As a result, after writing one of the data “00b”, “01b”, “10b”, and“11b”, a potential of a node connected to the gate electrode of thetransistor 201 (hereinafter referred to as the node A) becomesapproximately one of V₀₀ [V], V₀₁ [V], V₁₀ [V], and V₁₁ [V]. A chargecorresponding to the potential of the first signal line S1 isaccumulated in the node A; however, since off-state current of thetransistor 202 is extremely small or is substantially 0, a potential ofthe gate electrode of the transistor 201 is held for a long time.

When reading is performed from the memory cell 200, first, the bit lineBL is pre-charged to a voltage V_(pc) [V]. The source line SL is set toV_(s) _(_) _(read) [V], the word line WL is set to 2 [V], the secondsignal line S2 is set to 0 [V], and the first signal line S1 is set to 0[V]. At this time, the transistor 203 takes an on state and thetransistor 202 takes an off state. Note that the potential V_(pc) is setto lower than V₀₀-V_(th). Additionally, V_(s) _(_) _(read) is set tohigher than V₁₁-V_(th).

As a result, current flows from the source line SL to the bit line BL,and the bit line is charged to a potential represented by (the potentialof the node A)−(a threshold voltage Vth of the transistor 201).Consequently, the potential of the bit line BL becomes one ofV₀₀-V_(th), V₀₁-V_(th), V₁₀-V_(th), and V₁₁-V_(th) corresponding to thedata “00b”, “01b”, “10b”, and “11b”, respectively. Since the potentialsapplied to the bit line and corresponding to the data are different fromeach other, a reading circuit connected to the bit line BL can read thedata “00b”, “01b”, “10b”, and “11b”.

A block circuit diagram of a semiconductor device according to oneembodiment of the present invention including m×n bits of storagecapacity is illustrated in FIG. 17.

The semiconductor device according to one embodiment of the presentinvention includes the following components: an m number of word linesWL and an m number of second signal lines S2; an n number of bit linesBL, an n number of first signal lines S1, and an n number of sourcelines SL; a memory cell array 210 including a plurality of memory cells200(1, 1) to 200(m, n) arranged in a matrix with m cells in vertical(rows) and n cells in horizontal (columns) (both m and n are naturalnumbers); and peripheral circuits such as reading circuits 211, firstsignal line driver circuits 212, a driver circuit 213 for the secondsignal lines and word lines, and a potential generating circuit 214. Asanother peripheral circuit, a refresh circuit and the like may beprovided.

Each of the memory cells, for example, a memory cell 200(i, j) isconsidered (here, i is an integer greater than or equal to 1 and lessthan or equal to m and j is an integer greater than or equal to 1 andless than or equal to n). The memory cell 200(i, j) is connected to thebit line BL(j), the first signal line S1(j), the source line SL(j), theword line WL(i), and the second signal line S2(i). In addition, the bitlines BL(1) to BL(n) and the source lines SL(1) to SL(n) are connectedto the reading circuits 211. The first signal lines S1(1) to S1(n) areconnected to the first signal line driver circuits 212. The word linesWL(1) to WL(m) and the second signal lines S2(1) to S2(m) are connectedto the driver circuit 213 for the second signal lines and the wordlines.

An example of the driver circuit 213 for the second signal lines and theword lines is illustrated in FIG. 18. The driver circuit 213 for thesecond signal lines and the word lines includes a decoder 215. Thedecoder 215 is connected to the second signal lines S2 and the wordlines WL through switches. Further, the second signal lines S2 and theword lines WL are connected to GND (a ground potential) through theswitches. The switches are controlled by a read enable signal (an REsignal) or a write enable signal (a WE signal). An address signal ADR isinput to the decoder 215 from the exterior.

When the address signal ADR is input to the driver circuit 213 for thesecond signal lines and the word lines, rows specified by the address(hereinafter also referred to as selected rows) are asserted(activation) and rows other than the rows specified by the address(hereinafter also referred to as non-selected rows) are de-asserted(inactivation). Further, when the RE signal is asserted, the word lineWL is connected to an output of the decoder 215, and when the RE signalis de-asserted, the word line WL is connected to the GND. When the WEsignal is asserted, the second signal line S2 is connected to the outputof the decoder 215, and when the WE signal is de-asserted, the secondsignal line S2 is connected to the GND.

An example of the first signal line driver circuit 212 is illustrated inFIG. 19. The first signal line driver circuit 212 includes a multiplexer(MUX1). Input data DI and the writing potentials V₀₀, V₀₁, V₁₀, and V₁₁are input to the multiplexer (MUX1). An output terminal of themultiplexer (MUX1) is connected to the first signal line S1 through aswitch. Additionally, the first signal line S1 is connected to GNDthrough a switch. The switches are controlled by a write enable signal(a WE signal).

When DI is input to the first signal line driver circuit 212, themultiplexer (MUX1) selects writing potential V_(w) in accordance withthe value of DI from the writing potentials V₀₀, V₀₁, V₁₀, and V₁₁. Thebehavior of the multiplexer (MUX1) is shown in Table 1. When the WEsignal is asserted, the selected writing potential V_(w) is applied tothe first signal line S1. When the WE signal is de-asserted, 0 [V] isapplied to the first signal line S1 (the first signal line S1 isconnected to the GND).

TABLE 1 DI[1] DI[0] MUX1 output 0 0 Corresponds to V00 0 1 Correspondsto V01 1 0 Corresponds to V10 1 1 Corresponds to V11

An example of the reading circuit 211 is illustrated in FIG. 20. Thereading circuit 211 includes a plurality of sense amplifier circuits, alogic circuit 229, and the like. One input terminal of each of the senseamplifier circuits is connected to the bit line BL and a wiring to whicha potential V_(pc) is applied through switches. Any of referencepotentials V_(ref0), V_(ref1), and V_(ref2) is input to the other inputterminal of each of the sense amplifier circuits. An output terminal ofeach of the sense amplifier circuits is connected to an input terminalof the logic circuit 229. Note that the switches are controlled by aread enable signal (an RE signal).

A state of a memory cell can be read as a digital signal with three bitsby setting values of each of the reference potentials V_(ref0),V_(ref1), and V_(ref2) so as to satisfyV₀₀-V_(th)<V_(ref0)<V₀₁-V_(th)<V_(ref1)<V₁₀-V_(th)<V_(ref2)<V₁₁-V_(th).For example, in the case of the data “00b”, a potential of the bit lineBL is V₀₀-V_(th). Here, the potential of the bit line is smaller thanany of the reference potentials: V_(ref0), V_(ref1), and V_(ref2),whereby, all of outputs SA_OUT0, SA_OUT1, and SA_OUT2 of the senseamplifier circuits become “0”. Similarly, in the case of the data “01b”,the potential of the bit line BL becomes V₀₁-V_(th), so that the outputsSA_OUT0, SA_OUT1, and SA_OUT2 of the sense amplifier circuits become“1”, “0”, and “0”, respectively. In the case of the data “10b”, thepotential of the bit line BL is V₁₀-V_(th), whereby the outputs SA_OUT0,SA_OUT1, and SA_OUT2 of the sense amplifier circuits become “1”, “1”,and “0”, respectively. In the case of the data “11b”, the potential ofthe bit line BL is V₁₁-V_(th), so that the outputs SA_OUT0, SA_OUT1, andSA_OUT2 of the sense amplifier circuits become “1”, “1”, and “1”,respectively. Then, using the logic circuit 229 shown in a logic tableTable 2, data DO with two bits is generated and output from the readingcircuit 211.

TABLE 2 SA_OUT0 SA_OUT1 SA_OUT2 DO1 DO0 0 0 0 0 0 1 0 0 0 1 1 1 0 1 0 11 1 1 1

Note that in the reading circuit 211 illustrated here, when the REsignal is de-asserted, the source line SL is connected to GND and 0 [V]is applied to the source line SL. At the same time, the potential V_(pc)[V] is also applied to the bit line BL and a terminal of the senseamplifier circuits connected to the bit line BL. When the RE signal isasserted, V_(s) _(_) _(read) [V] is applied to the source line SL,whereby a potential reflecting data is charged to the bit line BL. Then,the reading is performed. Note that the potential V_(pc) is set to lowerthan V₀₀-V_(th). Additionally, V_(s) _(_) _(read) is set to higher thanV₁₁-V_(th).

Note that “potentials of the bit line BL” compared in reading include apotential of node of input terminals of the sense amplifier circuitsconnected to the bit line BL through switches. That is, potentialscompared in the reading circuit 211 do not need to be exactly the sameas the potentials of the bit line BL.

An example of the potential generating circuit 214 is illustrated inFIG. 21. In the potential generating circuit 214, a potential is dividedbetween V_(dd) and GND by resistance, whereby desired potentials can beobtained. Then the generated potentials are output through an analoguebuffer 220. In such a manner, the writing potentials V₀₀, V₀₁, V₁₀, andV₁₁ and the reference potentials V_(ref0), V_(ref1), and V_(ref2) aregenerated. Note that a configuration in whichV₀₀<V_(ref0)<V₀₁<V_(ref1)<V₁₀<V_(ref2)<V₁₁ is illustrated in FIG. 21;however, a potential relation is not limited thereto. Potentialsrequired can be generated as appropriate by adjusting a resistor andnodes to which the reference potentials are connected. Further, V₀₀,V₀₁, V₁₀, and V₁₁ may be generated using another potential generatingcircuit than that of V_(ref0), V_(ref1), and V_(ref2).

A potential boosted in a boosting circuit may be supplied to thepotential generating circuit 214 instead of the power supply potentialV_(dd). This is because the absolute value of the potential differencecan be increased by supplying an output of the boosting circuit to thepotential generating circuit, so that a higher potential can besupplied.

Note that even in the case where the power supply potential V_(dd) isdirectly supplied to the potential generating circuit, the power supplypotential V_(dd) can be divided into a plurality of potentials. However,since in this case, it is difficult to distinguish adjacent potentialsfrom each other, writing mistakes and reading mistakes would increase.In the case where the output of the boosting circuit is supplied to thepotential generating circuit, the absolute value of the potentialdifference can be increased, so that a sufficient potential differencebetween the adjacent potentials can be secured even if the number ofpartitions is increased.

Thus, storage capacity of a memory cell can be increased withoutincreasing writing mistakes and reading mistakes.

As an example of a boosting circuit in which boosting of four stages isperformed, a boosting circuit 219 is illustrated in FIG. 22A. In FIG.22A, the power supply potential V_(dd) is supplied to an input terminalof a first diode 402. An input terminal of a second diode 404 and oneterminal of a first capacitor 412 are connected to an output terminal ofthe first diode 402. Similarly, an input terminal of a third diode 406and one terminal of a second capacitor 414 are connected to an outputterminal of the second diode 404. Connections of other parts are similarto the above; therefore, detailed explanation is omitted. However, theconnection can be represented as follows: one terminal of an n-thcapacitor is connected to an output terminal of an n-th diode (where nrepresents an integer). Note that an output of a fifth diode 410 becomesan output V_(out) of the boosting circuit 219.

In addition, a clock signal CLK is input to the other terminal of thefirst capacitor 412 and the other terminal of a third capacitor 416. Aninverted clock signal CLKB is input to the other terminal of the secondcapacitor 414 and the other terminal of a fourth capacitor 418. That is,the clock signal CLK is input to the other terminal of the (2k−1)-thcapacitor and the inverted clock signal CLKB is input to the otherterminal of the 2k-th capacitor (where k represents an integer). Notethat a ground potential GND is input to the other terminal of acapacitor of the last stage.

When the clock signal CLK is high, that is, when the inverted clocksignal CLKB is low, the first capacitor 412 and the third capacitor 416are charged, and potentials of node N1 and node N3 capacitively coupledwith the clock signal CLK are increased by predetermined voltage. On theother hand, potentials of node N2 and node N4 capacitively coupled withthe inverted clock signal CLKB are decreased by predetermined voltage.

Therefore, a charge moves through the first diode 402, the third diode406, and the fifth diode 410, and the potentials of node N2 and node N4are increased to a predetermined value.

Next, when the clock signal CLK becomes low and the inverted clocksignal CLKB becomes high, potentials of node N2 and node N4 furtherincrease. On the other hand, the potentials of node N1, node N3, andnode N5 are decreased by a predetermined voltage.

Accordingly, a charge moves through the second diode 404 and the fourthdiode. As a result, potentials of node N3 and node N5 are increased to apredetermined potential. Thus, each of potentials of nodes becomesV_(N5)>V_(N4(CLKB=High))>V_(N3(CLK=High))>V_(N2(CLKB=High))>V_(N1(CLK=High))>V_(N2(CLKB=High))>V_(N1(CLK=High))>V_(dd),whereby boosting is performed. Note that the boosting circuit 219 is notlimited to a circuit performing four stages of boosting. The number ofstages of the boosting can be changed as appropriate.

Note that the output V_(out) of the boosting circuit 219 issignificantly affected by variations between the characteristics ofdiodes. For example, a diode is provided by connecting a sourceelectrode and a gate electrode of a transistor to each other, but inthis case, the diode is affected by variation in the threshold value ofthe transistor.

In order to control the output V_(out) with high accuracy, a structurein which the output V_(out) is fed back may be employed. FIG. 22Billustrates an example of a circuit configuration in the case where theoutput V_(out) is fed back. The boosting circuit 219 in FIG. 22Bcorresponds to the boosting circuit 219 in FIG. 22A.

An output terminal of the boosting circuit 219 is connected to one inputterminal of a sense amplifier circuit through a resistance R₁. Inaddition, the one input terminal of the sense amplifier circuit isgrounded through a resistance R₂. That is, a potential V₁ correspondingto the output V_(out) is input to the one input terminal of the senseamplifier circuit. Here, V₁=V_(out)·R₂/(R₁+R₂).

Further, the reference potential V_(ref) is input to the other inputterminal of the sense amplifier circuit. That is, V₁ and V_(ref) arecompared in the sense amplifier circuit. An output terminal of the senseamplifier circuit is connected to a control circuit. A clock signal CLK0is input to the control circuit. The control circuit outputs the clocksignal CLK and the inverted clock signal CLKB to the boosting circuit219 in response to the output of the sense amplifier circuit.

When V₁>V_(ref), an output sig_1 of the sense amplifier circuit isasserted, and the control circuit stops supplying the clock signal CLKand the inverted clock signal CLKB to the boosting circuit 219. Thus,the boosting operation is stopped, so that the potential V_(out) stopsincreasing. Then, a circuit connected to the output of the boostingcircuit 219 consumes electricity, whereby the potential V_(out)gradually decreases.

When V₁<V_(ref), the output sig_1 of the sense amplifier circuit isde-asserted, and the control circuit starts to supply the clock signalCLK and the inverted clock signal CLKB to the boosting circuit 219.Thus, the boosting operation is performed, so that the potential V_(out)gradually increases.

In such a manner, the output potential V_(out) of the boosting circuit219 can be kept equal to a predetermined value by feeding back theoutput potential V_(out) of the boosting circuit 219. The aboveconfiguration is especially effective in the case where thecharacteristics of the diodes vary. Moreover, it is also effective inthe case where a predetermined potential is to be generated inaccordance with the reference potential V_(ref). Note that a pluralityof potentials can be generated in the boosting circuit 219 by using aplurality of different reference potentials.

The absolute value of a potential difference can be increased bysupplying an output of a boosting circuit to a potential generatingcircuit. Therefore, a higher potential can be generated without a changeof the minimum unit of the potential difference. That is, storagecapacity of a memory cell can be increased.

FIG. 23 illustrates a differential sense amplifier as an example of asense amplifier circuit. The differential sense amplifier includes inputterminals V_(in)(+) and V_(in)(−) and an output terminal V_(out), andamplifies a difference between V_(in)(+) and V_(in)(−). The outputV_(out) is relatively high when V_(in)(+)>V_(in)(−), and is relativelylow when V_(in)(+)<V_(in)(−).

FIG. 24 illustrates a latch sense amplifier as an example of a senseamplifier circuit. The latch sense amplifier includes input-outputterminals V1 and V2 and input terminals of control signals Sp and Sn.First, power supply is stopped by setting the signal Sp at high and thesignal Sn at low. Next, potentials to be compared are applied to V1 andV2. After that, when power is supplied by setting the signal Sp at lowand the signal Sn at high, output V1 becomes high and output V2 becomeslow when the potentials before supplying the power verify V1>V2. OutputV1 becomes low and output V2 becomes high when potentials beforesupplying the power verify V1<V2. In such a manner, a potentialdifference between V1 and V2 is amplified.

FIG. 25A illustrates an example of a timing chart of a writingoperation. The case where data “10b” is a written to a memory cell isillustrated in the timing chart in FIG. 25A. The selected second signalline S2 becomes 0 [V] earlier than the first signal line S1. During thewriting period, the potential of the first signal line S1 becomes V₁₀.Note that the word line WL, the bit line BL, and the source line SL areall at 0 [V]. In addition, FIG. 25B illustrates an example of a timingchart of reading operation. The case where data “10b” is read out from amemory cell is illustrated in the timing chart in FIG. 25B. The selectedword line WL is asserted and the source line SL takes the potentialV_(s) _(_) _(read) [V], whereby the bit line BL is charged to V₁₀-V_(th)[V] corresponding to the data “10b” of the memory cell. As a result,SA_OUT0, SA_OUT1, and SA_OUT2 become “1”, “1”, and “0”, respectively.Note that the first signal line S1 and the second signal line S2 are at0 [V].

Here, examples of specific operation potentials (voltages) aredescribed. For example, the following can be obtained: the thresholdvoltage of the transistor 201 is approximately 0.3 V, the power supplyvoltage V_(DD) is 2 V, V₁₁ is 1.6 V, V₁₀ is 1.2 V, V₀₁ is 0.8 V, V₀₀ is0V, V_(ref0) is 0.6 V, V_(ref1) is 1.0 V, and V_(ref2) is 1.4 V. Thepotential V_(pc) is preferably 0 V, for example.

Although, the first signal line S1 is arranged in the bit line BLdirection (the column direction) and the second signal line S2 isarranged in the word line WL direction (the row direction) in thisembodiment, one embodiment of the present invention is not limitedthereto. For example, the first signal line S1 may be arranged in theword line WL direction (the row direction) and the second signal line S2may be arranged in the bit line BL direction (the column direction). Insuch a case, the driver circuit to which the first signal line S1 isconnected and the driver circuit to which the second signal line S2 isconnected may be arranged as appropriate.

In this embodiment, operation of four-valued memory cells, i.e., writingany of four different states to one memory cell or reading any of fourdifferent states from one memory cell is described. By appropriatelychanging the circuit configuration, operation of n valued memory cells,i.e., writing any of n different states (n is integer greater than orequal to 2) to one memory cell or reading any of n different states fromone memory cell, can be performed.

For example, in eight-valued memory cells, storage capacity becomesthree times as large as two-valued memory cells. When writing data,eight values of potentials are prepared to decide a potential of a nodeA and eight states are prepared. When reading data, seven referencepotentials capable of distinguishing the eight states are prepared. Onesense amplifier is provided and comparison is performed seven times, sothat data can be read. Further, the number of comparison times may bereduced to three times by feeding back the result of comparison. In areading method for driving the source line SL, data can be read in onecomparison by providing seven sense amplifiers. Furthermore, a pluralityof sense amplifiers can be provided and comparison is performed pluraltimes.

Generally, in 2^(k)-valued memory cells (k is integer greater than orequal to 1), memory capacity is k times as large as that of two-valuedmemory cells. When writing data, 2^(k) values of writing potentials todecide a potential of a node A are prepared, each value corresponding toone of 2^(k) states. When reading data, 2^(k)−1 values of referencepotentials enabling to distinguish 2^(k) states may be set up. One senseamplifier is provided and comparison is performed 2^(k)−1 times, so thatdata can be read. Further, the number of comparison times may be reducedto k times by feeding back the result of comparison. In a reading methodfor driving the source line SL, data can be read in one comparison byproviding a 2^(k)−1 number of sense amplifiers. Furthermore, a pluralityof sense amplifiers can be provided and comparison is performed pluraltimes.

The semiconductor device according to this embodiment can storeinformation for quite a long time because of low off-state currentcharacteristics of the transistor 202. That is, refresh operation whichis necessary in DRAM and the like is not needed, so that powerconsumption can be reduced. In addition, the semiconductor device ofthis embodiment can be used as a substantially nonvolatile memorydevice.

Since writing data and the like are performed by switching operation ofthe transistor 202, high voltage is not needed and there is no problemof deterioration of elements. Further, high-speed operation can beeasily realized because writing information and erasing information areperformed by turning transistors on or off. Furthermore, information canbe directly rewritten by controlling potentials input to transistors.Accordingly, erasing operation which is necessary in flash memory andthe like is not needed, and decrease in operation speed due to erasingoperation can be prevented.

Moreover, a transistor using a material other than an oxidesemiconductor material can operate at sufficiently high speed;therefore, by using the transistor, memory content can be read at highspeed.

The semiconductor device according to this embodiment is a multivaluedsemiconductor device, so that storage capacity per area can beincreased. Therefore, the size of the semiconductor device can bereduced and the semiconductor device can be highly integrated.Additionally, potentials of nodes which take a floating state whenwriting operation is performed can be directly controlled; thus,threshold voltages of the semiconductor device can be easily controlledwith high accuracy which is required for a multivalued memory.Therefore, verification of states after writing data which is requiredto a multivalued-type memory can be omitted, and in such a case, timerequired for writing data can be shortened.

Embodiment 3

In this embodiment, a circuit configuration and operation of asemiconductor device according to one embodiment of the presentinvention are described.

In this embodiment, a reading operation different from that ofEmbodiment 2 is described with the use of a circuit configuration of amemory element illustrated in FIG. 16. Note that the capacitor 205 shownin FIG. 16 is not always necessary and can be omitted in some cases. Thememory element considered is a multivalued memory element, and a casewhere the memory element is a four-valued memory element is described inthis embodiment. Four states of a memory cell 200 are data “00b”, “01b”,“10b”, and “11b”, and corresponding potentials of a node A are V₀₀, V₀₁,V₁₀, and V₁₁ (V₀₀<V₀₁<V₁₀<V₁₁), respectively.

When writing is performed to the memory cell 200, the source line SL isset to 0 [V], the word line WL is set to 0 [V], the bit line BL is setto 0 [V], and the second signal line S2 is set to 2 [V]. When the data“00b” is to be written, the first signal line S1 is set to V₀₀ [V]. Whenthe data “01b” is to be written, the first signal line S1 is set to V₀₁[V]. When the data “10b” is to be written, the first signal line S1 isset to V₁₀ [V]. When the data “11b” is to be written, the first signalline S1 is set to V₁₁ [V]. At this time, the transistor 203 is put in anoff state and a transistor 202 to an on state. Note that when writingdata is completed, the second signal line S2 is set to 0 [V] so as toturn off the transistor 202, before a potential of the first signal lineS1 is changed.

As a result, after writing the data “00b”, “01b”, “10b”, or “11b”, thepotential of a node connected to a gate electrode of the transistor 201(hereinafter, referred to as a node A) is approximately V₀₀ [V], V₀₁[V], V₁₀ [V], or V₁₁[V], respectively. A charge is accumulated in thenode A in accordance with the potential of the first signal line S1, andsince off-state current of the transistor 202 is extremely small orsubstantially 0, the potential of the gate electrode of the transistor201 is held for a long time.

Next, in the case where reading of the memory cell 200 is performed, thesource line SL is set to 0 [V], the word line WL is set to V_(DD), thesecond signal line S2 is set to 0 [V], the first signal line S1 is setto 0 [V], and a reading circuit 211 connected to the bit line BL is inan operation state. At this time, the transistor 203 is in an on stateand the transistor 202 is in an off state.

As a result, an effective resistance value of the memory cell 200between a source line SL and a corresponding bit line BL is function ofthe state of the memory cell 200. As the potential of the node A isincreased, the effective resistance value is reduced. The readingcircuit can read out the data “00b”, “01b”, “10b”, and “11b” frompotential differences caused by differences between resistance values.Note that in the case of data other than data “00b” in which thepotential of the node A is the lowest value, it is preferable that thetransistor 201 be in an on state.

FIG. 26 illustrates a block circuit diagram of another example of asemiconductor device according to one embodiment of the presentinvention, which includes memory capacity of m×n bits.

The semiconductor device illustrated in FIG. 26 includes an m number ofword lines WL, an m number of second signal lines S2, an n number of bitlines BL, an n number of first signal lines S1, a memory cell array 210in which the plurality of memory cells 200(1, 1) to 200(m, n) arearranged in a matrix of m cells in vertical (rows) by n cells inhorizontal (columns) (both m and n are natural numbers), and peripheralcircuits such as reading circuits 221, first signal line driver circuits212, a driver circuit 213 for the second signal lines and the wordlines, and a potential generating circuit 214. A refresh circuit or thelike may be provided as another peripheral circuit.

Each of the memory cells, for example, a memory cell 200(i, j) isconsidered (here, i is an integer greater than or equal to 1 and lessthan or equal to m and j is an integer greater than or equal to 1 andless than or equal to n). The memory cell 200(i, j) is connected to abit line BL(j), a first signal line S1(j), a word line WL(i), a secondsignal line S2(i), and a source wiring. A potential Vs (0V for example)is applied to the source wiring. In addition, the bit lines BL(1) toBL(n) are connected to the reading circuits 221, the first signal linesS1(1) to S1(n) are connected to the first signal line driver circuits212, the word lines WL(1) to WL(m) and the second signal lines S2(1) toS2(m) are connected to the driver circuit 213 for the second signallines and the word lines.

Note that, the configurations of the potential generating circuit 214,the driver circuit 213 for the second signal lines and the word signallines, and the first signal line driver circuit 212 may be the same asthe configurations of FIG. 21, FIG. 18, and FIG. 19, for example.

FIG. 27 illustrates an example of the reading circuit 221. The readingcircuit 221 includes a sense amplifier circuit, a reference cell 225, alogic circuit 229, a multiplexer (MUX2), flip-flop circuits FF0, FF1,and FF2, a bias circuit 223, and the like. The reference cell 225includes a transistor 216, a transistor 217, and a transistor 218. Thetransistor 216, the transistor 217, and the transistor 218 included inthe reference cell 225 correspond to the transistor 201, the transistor202, and the transistor 203 included in the memory cell, respectively,and form the same circuit configuration as the memory cell. It ispreferable that the transistor 216 and the transistor 218 be formedusing materials other than an oxide semiconductor, and the transistor217 be formed using an oxide semiconductor. In addition, in the casewhere the memory cell includes the capacitor 205, it is preferable thatthe reference cell 225 also include a capacitor. Two output terminals ofthe bias circuit 223 are connected to the bit line BL and a drainelectrode of the transistor 218 included in the reference cell 225,respectively, through a switch. In addition, the output terminals of thebias circuit 223 are connected to input terminals of the sense amplifiercircuit. An output terminal of the sense amplifier circuit is connectedto the flip-flop circuits FF0, FF1, and FF2. Output terminals of theflip-flop circuits FF0, FF1, and FF2 are connected to input terminals ofthe logic circuit 229. Signals RE0, RE1, and RE2, reference potentialsV_(ref0), V_(ref1), and V_(ref2), and GND are input to the multiplexer(MUX2). An output terminal of the multiplexer (MUX2) is connected to oneof a source electrode and a drain electrode of the transistor 217included in the reference cell 225. The bit line BL and the drainelectrode of the transistor 218 included in the reference cell 225 areconnected to a wiring V_(pc) through switches. Note that the switchesare controlled by a signal φA.

The reading circuit 221 has a structure in which a comparison of theconductance of the memory cell with the conductance of the referencecell 225 is performed by comparing potential values output from thememory cell and the reference cell. This structure includes one senseamplifier circuit. In this structure, the comparison is performed threetimes in order to read out the four states. In other words, thecomparison of the conductance of the memory cell with the conductance ofthe reference cell 225 is performed in the case of each of three valuesof reference potentials. The three comparisons are controlled by thesignals RE0, RE1, RE2, and φA. The multiplexer (MUX2) selects any of thethree values of reference potentials V_(ref0), V_(ref1), and V_(ref2),and GND in accordance with the values of the signals RE0, RE1, and RE2.The behavior of the multiplexer (MUX2) is illustrated in Table 3. Theflip-flop circuits FF0, FF1, and FF2 are controlled by the signals RE0,RE1, and RE2, respectively, and store the value of an output signalSA_OUT of the sense amplifier.

TABLE 3 RE0 RE1 RE2 VwL 0 0 0 Corresponds to GND 1 0 0 Corresponds toVref0 0 1 0 Corresponds to Vref1 0 0 1 Corresponds to Vref2

The values of the reference potentials are determined so as to beV₀₀<V_(ref0)<V₀₁<V_(ref1)<V₁₀<V_(ref2)<V₁₁. Thus, the four states can beread out from the results of the three comparisons. The values of theflip-flop circuits FF0, FF1, and FF2 are “0”, “0”, and “0”, respectivelyin the case of the data “00b”. The values of the flip-flop circuits FF0,FF1, and FF2 are “1”, “0”, and “0”, respectively in the case of the data“01b”. The values of the flip-flop circuits FF0, FF1, and FF2 are “1”,“1”, and “0”, respectively in the case of the data “10b”. The values ofthe flip-flop circuits FF0, FF1, and FF2 are “1”, “1”, and “1”,respectively in the case of the data “11b”. In this manner, the state ofthe memory cell can be read out as a 3-bit digital signal. After that,with the use of the logic circuit 229 whose a logic value table is shownin Table 2, 2-bit data DO is generated and output from the readingcircuit.

Note that in the reading circuit illustrated in FIG. 27, when a signalRE is de-asserted, the bit line BL and the reference cell 225 areconnected to the wiring V_(pc) so that pre-charge is performed. When thesignal RE is asserted, electrical continuity between the bit line BL andthe bias circuit 223 and between the reference cell 225 and the biascircuit 223 is established.

Note that the pre-charge is not necessarily performed. In this circuit,it is preferable that the circuits which generate two signals input tothe sense amplifier circuit have almost the same structure. For example,it is preferable that the structure of the transistors in the referencecell 225 be the same as the structure of the corresponding transistorsin the memory cell. It is preferable that the corresponding transistorsin the bias circuit 223 and the switch have the same structure.

A timing chart of the writing operation is the same as FIG. 25A. Anexample of a timing chart of the reading operation is shown in FIG. 28.FIG. 28 shows a timing chart in the case where the data “10b” is readout from the memory cell. V_(ref0), V_(ref1), and V_(ref2) are input toan output MUX2_OUT of the multiplexer (MUX2) in respective periods inwhich the signals RE0, RE1, and RE2 are asserted. In a first half ofeach of the periods, the signal φA is asserted and a predeterminedpotential is applied to a node B of the transistor included in thereference cell 225. In a latter half of each of the periods, the signalφA is de-asserted, the predetermined potential is held in the node B ofthe transistor included in the reference cell 225 and the drainelectrode of the transistor 218 included in the reference cell 225 isconnected to the bias circuit 223. Then, a result of the comparison inthe sense amplifier circuit is stored in each of the flip-flop circuitsFF0, FF1, and FF2. In the case of the data of the memory cell is “10b”,the values of the flip-flop circuits FF0, FF1, and FF2 are “1”, “1”, and“0”, respectively. Note that the first signal line S1 and the secondsignal line S2 are at 0 [V].

Next, a reading circuit which is different from that illustrated in FIG.20 and a reading method are described.

FIG. 29 illustrates an example of a reading circuit 231. The readingcircuit 231 includes a sense amplifier circuit, a plurality of referencecells (a reference cell 225 a, a reference cell 225 b, and a referencecell 225 c), the logic circuit 229, the flip-flop circuits FF0, FF1, andFF2, the bias circuit 223, and the like.

The reference cell each includes a transistor 216, a transistor 217, anda transistor 218. Transistors 216, 217, and 218 correspond to transistor201, 202, and 203, respectively, and form the same circuit configurationas that of the memory cell 200. It is preferable that the transistors216 and the transistors 218 be formed using materials other than anoxide semiconductor, and the transistors 217 be formed using an oxidesemiconductor. In addition, in the case where the memory cells includecapacitors 205, it is preferable that the reference cell also include acapacitor. Two output terminals of the bias circuit 223 are connected tothe bit line BL and the drain electrodes of the transistors 218 includedin the plurality of reference cells, respectively, through switches. Inaddition, the output terminals of the bias circuit 223 are connected toinput terminals of the sense amplifier circuit. An output terminal ofthe sense amplifier circuit is connected to the flip-flop circuits FF0,FF1, and FF2. Output terminals of the flip-flop circuits FF0, FF1, andFF2 are connected to input terminals of the logic circuit 229. The bitline BL and the drain electrodes of the transistors 218 included in thereference cells are connected to a wiring V_(pc) through switches. Notethat the switches are controlled by a read enable signal (an RE signal).

The reading circuit 231 has a configuration in which a comparison of theconductance of the memory cell with the conductance of the plurality ofthe reference cells is performed by comparing potential values outputfrom the memory cells and the reference cell. This configurationincludes one sense amplifier circuit. In this structure, the comparisonis performed three times in order to read out the four states. That is,the reading circuit 231 has a structure in which the comparison of theconductance of the memory cell with the conductance of each of the threereference cells is performed. The three comparisons are controlled bythe signals RE0, RE1, and RE2. V_(ref0), V_(ref1), and V_(ref2) areinput to the gate electrode of the transistor 216 of the threerespective reference cells through the transistors 217. Before reading,the signal φA is asserted, all the transistors 217 are turned on, andwriting to the reference cells is performed. The writing to thereference cells may be performed once before the reading operation.Needless to say, writing may be performed once when reading is performedseveral times, or may be performed every time when reading is performed.In addition, the flip-flop circuits FF0, FF1, and FF2 are controlled bythe signals RE0, RE1, and RE2, and store the value of the output signalSA_OUT of the sense amplifier.

The values of the reference potentials are determined so as to verifyV₀₀<V_(ref0)<V₀₁<V_(ref1)<V₁₀<V_(ref2)<V₁₁. Thus, the four states can beread out from the results of the three comparisons. The values of theflip-flop circuits FF0, FF1, and FF2 are “0”, “0”, and “0”, respectivelyin the case of the data “00b”. The values of the flip-flop circuits FF0FF1, and FF2 are “1”, “0”, and “0”, respectively in the case of the data“01b”. The values of the flip-flop circuits FF0, FF1, and FF2 are “1”,“1”, and “0”, respectively in the case of the data “10b”. The values ofthe flip-flop circuits FF0, FF1, and FF2 are “1”, “1”, and “1”,respectively in the case of the data “11b”. In this manner, the state ofthe memory cell can be read out as a 3-bits digital signal. After that,with the use of the logic circuit 229 which is represented in a logicvalue table shown in Table 2, 2-bit data DO is generated and output fromthe reading circuit.

Note that in the reading circuit illustrated in FIG. 29, when the REsignal is de-asserted, the bit line BL and the reference cells areconnected to the wiring V_(pc) so that pre-charge is performed. When theRE signal is asserted, electrical continuity between the bit line BL andthe bias circuit 223 and between the reference cells and the biascircuit 223 is established.

Note that the pre-charge is not necessarily performed. In this circuit,it is preferable that the circuits which generate two signals input tothe sense amplifier circuit have almost the same structure. For example,it is preferable that the structure of the transistors in the referencecells be the same as the structure of the corresponding transistors inthe memory cell. It is preferable that the corresponding transistors inthe bias circuit 223 and the switch have the same structure.

A timing chart of the writing operation is the same as FIG. 25A. Anexample of a timing chart of the reading operation is shown in FIG. 30.FIG. 30 shows a timing chart in the case where the data “10b” is readout from the memory cell. The reference cell 225 a, the reference cell225 b, and the reference cell 225 c are selected and connected to thebias circuit 223 in respective terms in which the signals RE0, RE1, andRE2 are asserted. Then, a result of comparison in the sense amplifiercircuit is stored in each of the flip-flop circuits FF0, FF1, and FF2.In the case of the data of the memory cell is “10b”, the values of theflip-flop circuits FF0, FF1, and FF2 are “1”, “1”, and “0”,respectively. Note that the first signal line S1 and the second signalline S2 have 0 [V].

Examples of specific operation potentials (voltages) are described. Forexample, the following can be obtained: the threshold voltage of thetransistor 201 is approximately 0.3 V, the power supply potential V_(DD)is 2 V, V₁₁ is 1.6 V, V₁₀ is 1.2 V, V₀₁ is 0.8 V, V₀₀ is 0V, V_(ref0) is0.6 V, V_(ref1) is 1.0 V, and V_(ref2) is 1.4 V. The potential V_(pc) ispreferably 0 V, for example.

Although, the first signal line S1 is arranged in the bit line BLdirection (the column direction) and the second signal line S2 isarranged in the word line WL direction (the row direction) in thisembodiment, one embodiment of the present invention is not limitedthereto. For example, the first signal line S1 may be arranged in theword line WL direction (the row direction) and the second signal line S2may be arranged in the bit line BL direction (the column direction). Insuch a case, the driver circuit to which the first signal line S1 isconnected and the driver circuit to which the second signal line S2 isconnected may be arranged as appropriate.

In this embodiment, operation of four-valued memory cells, i.e., writingany of four different states to one memory cell or reading any of fourdifferent states from one memory cell is described. By appropriatelychanging the circuit configuration, operation of n-valued memory cells,i.e., writing any of n different states (n is an integer greater than orequal to 2) to one memory cell or reading any of n different states fromone memory cell, can be performed.

For example, in eight-valued memory cells, storage capacity becomesthree times as large as two-valued memory cells. When writing data,eight values of potentials corresponding to eight states are prepared todecide a potential of a node A. When reading data, seven referencepotentials capable of distinguishing the eight states are prepared. Onesense amplifier is provided and comparison is performed seven times, sothat data can be read. Further, the number of comparison times may bereduced to three times by feeding back the result of comparison. In areading method for driving the source line SL, data can be read in onecomparison by providing seven sense amplifiers. Furthermore, a pluralityof sense amplifiers can be provided and comparison is performed pluraltimes.

Generally, in 2^(k)-valued memory cells (k is an integer greater than orequal to 1), memory capacity is k times as large as that of two-valuedmemory cells. When writing data, 2^(k) values of writing potentials todecide a potential of a node A are prepared, each value corresponding toone of 2^(k) states. When reading data, 2^(k)−1 values of referencepotentials enabling to distinguish 2^(k) states may be set up. One senseamplifier is provided and comparison is performed 2^(k)−1 times, so thatdata can be read. Further, the number of comparison times may be reducedto k times by feeding back the result of comparison. In a reading methodfor driving the source line SL, data can be read in one comparison byproviding a 2^(k)−1 number of sense amplifiers. Furthermore, a pluralityof sense amplifiers can be provided and comparison is performed pluraltimes.

The semiconductor device according to this embodiment can storeinformation for quite a long time because of low off-state currentcharacteristics of the transistor 202. That is, refresh operation whichis necessary in DRAM and the like is not needed, so that powerconsumption can be reduced. In addition, the semiconductor device ofthis embodiment can be used as a substantially nonvolatile memorydevice.

Since writing information and the like are performed by switchingoperation of the transistor 202, high voltage is not needed and there isno problem of deterioration of elements. Further, high-speed operationcan be easily realized because writing information and erasinginformation are performed by turning transistors on or off. Furthermore,information can be directly rewritten by controlling potentials input totransistors. Accordingly, erasing operation which is necessary in flashmemory and the like is not needed, and decrease in operation speed dueto erasing operation can be prevented.

In addition, the transistor formed using a material other than an oxidesemiconductor can be operated at sufficient high speed; therefore, byusing the transistor, stored contents can be read out at high speed.

The semiconductor device according to this embodiment is a multivaluedsemiconductor device, so that storage capacity per area can beincreased. Therefore, the size of the semiconductor device can bereduced and the semiconductor device can be highly integrated.Additionally, potentials of a node which takes a floating state whenwriting operation is performed can be directly controlled; thus,threshold voltages of the semiconductor device can be easily controlledwith high accuracy which is required for a multivalued memory.Therefore, verification of states after writing data which is necessaryto a multivalued-type memory can be omitted, and in such a case, timerequired for writing data can be shortened.

Embodiment 4

In this embodiment, a circuit configuration and operation of asemiconductor device which is different from Embodiment 2 and Embodiment3 are described as an example.

FIG. 31 illustrates an example of a circuit diagram of a memory cellincluded in the semiconductor device. A memory cell 240 illustrated inFIG. 31 includes a source line SL, a bit line BL, a first signal lineS1, a second signal line S2, a word line WL, a transistor 201, atransistor 202, and a capacitor 204. The transistor 201 is formed usinga material other than an oxide semiconductor, and the transistor 202 isformed using an oxide semiconductor.

Here, a gate electrode of the transistor 201, one of a source electrodeand a drain electrode of the transistor 202, and one of electrodes ofthe capacitor 204 are electrically connected to one another. Inaddition, the source line SL and a source electrode of the transistor201 are electrically connected to each other. The bit line BL and adrain electrode of the transistor 201 are electrically connected to eachother. The first signal line S1 and the other of the source electrodeand the drain electrode of the transistor 202 are electrically connectedto each other. The second signal line S2 and a gate electrode of thetransistor 202 are connected to each other. The word line WL and theother of the electrodes of the capacitor 204 are electrically connectedto each other.

Next, operation of the memory cell 240 illustrated in FIG. 31 isdescribed. Here, a four-valued memory cell is employed. Four states ofthe memory cell 240 are data “00b”, “01b”, “10b”, and “11b”, andpotentials of a node A in the four states are V₀₀, V₀₁, V₁₀, and V₁₁(V₀₀<V₀₁<V₁₀<V₁₁), respectively.

When writing is performed to the memory cell 240, the source line SL isset to 0 [V], the word line WL is set to 0 [V], the bit line BL is setto 0 [V], and the second signal line S2 is set to V_(DD). When the data“00b” is written, the first signal line S1 is set to V₀₀ [V]. When thedata “01b” is written, the first signal line S1 is set to V₀₁ [V]. Whenthe data “10b” is written, the first signal line S1 is set to V₁₀ [V].When the data “11b” is written, the first signal line S1 is set to V₁₁[V]. At this time, the transistor 203 becomes in an off state and thetransistor 202 becomes in an on state. Note that when writing data isfinished, the second signal line S2 is set to 0 [V] so as to turn offthe transistor 202, before a potential of the first signal line S1 ischanged.

As a result, after the writing of the data “00b”, “01b”, “10b”, or “11b”(the potential of the word line WL is set to 0 [V]), the potential of anode connected to a gate electrode of the transistor 201 (hereinafter,referred to as a node A) is approximately V₀₀ [V], V₀₁ [V], V₁₀ [V], orV₁₁ [V], respectively. A charge is accumulated in the node A inaccordance with the potential of the first signal line S1, and sinceoff-state current of the transistor 202 is extremely small orsubstantially 0, the potential of the gate electrode of the transistor201 is held for a long time.

Next, in the case where reading of the memory cell 240 is performed, thesource line SL is set to 0 [V], the second signal line S2 is set to 0[V], the first signal line S1 is set to 0 [V], and a reading circuitconnected to the bit line BL is in an operation state. At this time, thetransistor 202 is in an off state.

The word line WL is set to V_(—WL) [V]. The potential of the node A ofthe memory cell 240 depends on the potential of the word line WL. As thepotential of the word line WL increases, the potential of the node A ofthe memory cell 240 increases. For example, the potential of the wordline WL applied to the memory cells in the four different states ischanged from a low potential to a high potential, the transistor 201 ofthe memory cell of the data “11b” is turned on first, and then, thememory cell of the data “10b”, the memory cell of the data “01b”, andthe memory cell of the data “00b” are turned on in this order. In otherwords, by appropriately selecting the potential of the word line WL, thestates of the memory cells (that is, the data included in the memorycells) can be distinguished. By appropriately selecting the potential ofthe word line WL, the memory cell in which the transistor 201 is in anon state is in a low resistance state, and the memory cell in which thetransistor 201 is in an off state is in a high resistance state;therefore, when the resistance state is distinguished by the readingcircuit, the data “00b”, “01b”, “10b”, and “11b” can be read out.

FIG. 32 illustrates a block circuit diagram of another example of asemiconductor device according to one embodiment of the presentinvention, which includes memory capacity of m×n bit.

The semiconductor device illustrated in FIG. 32 includes an m number ofthe word lines WL, an m number of the second signal lines S2, an nnumber of the bit lines BL, an n number of the first signal lines S1, amemory cell array 210 in which the plurality of memory cells 240(1, 1)to 240(m, n) are arranged in a matrix of m cells in vertical (rows) by ncells in horizontal (columns) (both m and n are natural numbers), andperipheral circuits such as reading circuits 231, first signal linedriver circuits 212, a driver circuit 223 for the second signal linesand the word lines, and a potential generating circuit 214. A refreshcircuit or the like may be provided as another peripheral circuit.

Each of the memory cells, for example, a memory cell 240(i, j) isconsidered (here, i is an integer greater than or equal to 1 and lessthan or equal to m and j is an integer greater than or equal to 1 andless than or equal to n). The memory cell 240(i, j) is connected to abit line BL(j), a first signal line S1(j), a word line WL(i), a secondsignal line S2(i), and a source wiring SL. A potential Vs (0V forexample) is applied to the source wiring SL. In addition, the bit linesBL(1) to BL(n) are connected to the reading circuit 231, the firstsignal lines S1(1) to S1(n) are connected to the first signal linedriver circuits 212, the word lines WL(1) to WL(m) and the second signallines S2(1) to S2(m) are connected to the driver circuit 223 for thesecond signal lines S2 and the word lines WL.

Note that the configurations illustrated in FIG. 19 and FIG. 21 can beused for the configurations of the first signal line driver circuit 212and the potential generating circuit 214, respectively.

FIG. 33 illustrates an example of the reading circuit. The readingcircuit includes a sense amplifier circuit, flip-flop circuits, a biascircuit 224, and the like. The bias circuit 224 is connected to the bitline BL through a switch. Further, the bias circuit 224 is connected toan input terminal of the sense amplifier circuit. A reference potentialV_(r) is input to the other input terminal of the sense amplifiercircuit. An output terminal of the sense amplifier circuit is connectedto input terminals of flip-flop circuits FF0 and FF1. Note that theswitch is controlled by a read enable signal (an RE signal). The readingcircuit can read data out by reading out the voltage output by aspecified memory cell to the bit line BL to which it is connected. Thepotential of the bit line BL is function of the conductance of thememory cell. Note that reading of the conductance of the memory cellindicates reading of an on or off state of the transistor 201 includedin the memory cell.

The reading circuit illustrated in FIG. 33 includes the sense amplifiercircuit and performs comparison twice in order to distinguish the fourdifferent states. The two comparisons are controlled by signals RE0 andRE1. The flip-flop circuits FF0 and FF1 are controlled by the signalsRE0 and RE1, respectively, and store the value of an output signal ofthe sense amplifier circuit. An output DO[1] of the flip-flop circuitFF0 and an output DO[0] of the flip-flop circuit FF1 are output from thereading circuit.

Note that in the reading circuit illustrated, when the RE signal isde-asserted, the bit line BL is connected to the wiring V_(pc) andpre-charge is performed. When the RE signal is asserted, electricalcontinuity between the bit line BL and the bias circuit 224 isestablished. Note that pre-charge is not necessarily performed.

FIG. 34 illustrates the driver circuit 223 for the second signal linesS2 and the word lines WL, as another example.

In the driver circuit 223 for the second signal lines and the word linesillustrated in FIG. 34, when an address signal ADR is input, rowsspecified by the address (a selected row) are asserted, and the otherrows (non-selected rows) are de-asserted. The second signal line S2 isconnected to a decoder output when a WE signal is asserted, andconnected to GND when the WE signal is de-asserted. The word line WL inthe selected row is connected to the output V_(—WL) of a multiplexer(MUX3) and the word line WL in the non-selected row is connected to GND.The multiplexer (MUX3) selects any of the three values of referencepotentials V_(ref0), V_(ref1), and V_(ref2), and GND in response to thevalues of the signals RE0, RE1, and DO0. The behavior of the multiplexer(MUX3) is shown in Table 4.

TABLE 4 RE0 RE1 DO[1] VwL 0 0 * Corresponds to GND 1 0 * Corresponds toVref1 0 1 0 Corresponds to Vref0 0 1 1 Corresponds to Vref2

The three values of reference potentials V_(ref0), V_(ref1), andV_(ref2) (V_(ref0)<V_(ref1)<V_(ref2)) are described. In the case whereV_(ref0) is selected as the potential of the word line WL, a potentialwith which the transistor 201 of the memory cell of the data “00b” isturned off and the transistor 201 of the memory cell of the data “01b”is turned on is selected as V_(ref0). In addition, in the case whereV_(ref1) is selected as the potential of the word line WL, a potentialwith which the transistor 201 of the memory cell of the data “01b” isturned off and the transistor 201 of the memory cell of the data “10b”is turned on is selected as V_(ref1). In addition, in the case whereV_(ref2) is selected as the potential of the word line WL, a potentialwith which the transistor 201 of the memory cell of the data “10b” isturned off and the transistor 201 of the memory cell of the data “11b”is turned on is selected as V_(ref2).

In the reading circuit, reading is performed by the two comparisons. Afirst comparison is performed using V_(ref1). A second comparison isperformed using V_(ref2) when the value of the flip-flop FF0 is “0”which results from comparison with the use of V_(ref1), or usingV_(ref0) when the value of the flip-flop FF0 is “1” which results fromcomparison with the use of V_(ref1). In the above manner, the fourstates can be read out by the two comparisons.

A timing chart of writing operation is the same as FIG. 25A. An exampleof a timing chart of reading operation is shown in FIG. 35. FIG. 35shows a timing chart in the case where the data “10b” is read out fromthe memory cell. V_(ref1) and V_(ref2) are input to the selectedrespective word lines WL, and the comparison result in the senseamplifier circuit is stored in the flip-flop circuits FF0 and FF1 inrespective terms in which the signals RE0 and RE1 are asserted. In thecase of the data of the memory cell is “10b”, the values of theflip-flop circuits FF0 and FF1 are “1” and “0”. Note that the firstsignal line S1 and the second signal line S2 have 0 [V].

Examples of specific operation potentials (voltages) are described. Forexample, the threshold voltage V_(th) of the transistor 201 is 2.2 V.The potential of the node A depends on capacitance C1 between the wordline WL and the node A and gate capacitance C2 of the transistor 202,and here, for example, C1/C2>>1 when the transistor 202 is in an offstate, and C1/C2=1 when the transistor 202 is in an on state. FIG. 36shows a relationship between the potential of the node A and thepotential of the word line WL in the case where the source line SL has 0[V]. From FIG. 36, it is found that the reference potentials V_(ref0),V_(ref1), and V_(ref2) are preferably 0.6 V, 1.0 V, and 1.4 V,respectively in the case where when writing is performed, the potentialof the node A of the data “00b” is 0V, that of the data “01b” is 0.8 V,that of the data “10b” is 1.2 V, and that of the data “11b” is 1.6 V.

Note that the potential of the node A of the transistor 201 after thewriting (the potential of the word line WL is 0 [V]) is preferably lowerthan or equal to the threshold voltage of the transistor 201.

Although, the first signal line S1 is arranged in the bit line BLdirection (the column direction) and the second signal line S2 isarranged in the word line WL direction (the row direction) in thisembodiment, one embodiment of the present invention is not limitedthereto. For example, the first signal line S1 may be arranged in theword line WL direction (the row direction) and the second signal line S2may be arranged in the bit line BL direction (the column direction). Insuch a case, the driver circuit to which the first signal line S1 isconnected and the driver circuit to which the second signal line S2 isconnected may be arranged as appropriate.

In this embodiment, operation of four-valued memory cells, i.e., writingany of four different states to one memory cell or reading any of fourdifferent states from one memory cell is described. By appropriatelychanging the circuit configuration, operation of n-valued memory cells,i.e., writing any of n different states (n is an integer greater than orequal to 2) to one memory cell or reading any of n different states fromone memory cell, can be performed.

For example, in eight-valued memory cells, storage capacity becomesthree times as large as that of two valued memory cells. When writingdata, eight values of potentials are set up to decide a potential of anode A, each value corresponding to one of eight states. When readingdata, seven reference potentials enabling to distinguish the eightstates are set up. One sense amplifier is provided and comparison isperformed seven times, so that data can be read. Further, the number ofcomparison times may be reduced to three times by feeding back theresult of comparison. In a reading method for driving the source lineSL, data can be read in one comparison by providing seven senseamplifiers. Furthermore, a plurality of sense amplifiers can be providedand comparison can be performed plural times.

Generally, in 2^(k)-valued memory cells (k is an integer greater than orequal to 1), memory capacity is k times as large as that of two-valuedmemory cells. When writing data, 2^(k) values of writing potentials todecide a potential of a node A are set up, each value corresponding toone of 2^(k) states. When reading data, 2^(k)−1 values of referencepotentials enabling to distinguish 2^(k) states may be set up. One senseamplifier is provided and comparison is performed 2^(k)−1 times, so thatdata can be read. Further, the number of comparison times may be reducedto k times by feeding back the result of comparison. In a reading methodfor driving the source line SL, data can be read in one comparison byproviding a 2^(k)−1 number of sense amplifiers. Furthermore, a pluralityof sense amplifiers can be provided and comparison can be performedplural times.

The semiconductor device according to this embodiment can storeinformation for a relatively long time because of low off-state currentcharacteristics of the transistor 202. That is, refresh operation whichis necessary in DRAM and the like is not needed, so that powerconsumption can be reduced. In addition, the semiconductor device ofthis embodiment can be used as a substantial nonvolatile memory device.

Since writing information and the like are performed by switchingoperation of the transistor 202, high voltage is not needed and there isno problem of deterioration of elements. Further, high-speed operationcan be easily realized because writing information and erasinginformation are performed by turning transistors on or off. Furthermore,information can be directly rewritten by controlling potentials input totransistors. Accordingly, erasing operation which is necessary in flashmemory and the like is not needed, and decrease in operation speed dueto erasing operation can be prevented.

Further, the transistor formed using a material other than an oxidesemiconductor can be operated at sufficient high speed; therefore, byusing the transistor, stored contents can be read out at high speed.

The semiconductor device according to this embodiment is a multivaluedsemiconductor device, so that storage capacity per area can beincreased. Therefore, the size of the semiconductor device can bereduced and the semiconductor device can be highly integrated.Additionally, potentials of node which takes a floating state whenwriting operation is performed can be directly controlled; thus,threshold voltages of the semiconductor device can be easily controlledwith high accuracy which is required for a multivalued memory.Therefore, verification of states after writing data which is necessaryto a multivalued-type memory can be omitted, and in such a case, timerequired for writing data can be shortened.

Embodiment 5

In this embodiment, examples of an electronic appliance in which thesemiconductor device obtained according to any of the above embodimentsis mounted are described with reference to FIGS. 37A to 37F. Thesemiconductor device obtained according to any of the above embodimentscan store information even without supply of power. Degradation due towriting and erasing is not caused. Moreover, operation speed thereof ishigh. Thus, with the use of the semiconductor device, an electronicappliance having a new structure can be provided. Note that thesemiconductor device according to any of the above embodiments isintegrated and mounted on a circuit board or the like to be mounted onan electronic appliance.

FIG. 37A illustrates a laptop personal computer which includes thesemiconductor device according to any of the above embodiments andincludes a main body 301, a housing 302, a display portion 303, akeyboard 304, and the like. When the semiconductor device according toone embodiment of the present invention is applied to the laptoppersonal computer, information can be stored even without supply ofpower. In addition, degradation due to writing and erasing is notcaused. In addition, operation speed thereof is high. Thus, it ispreferable that the semiconductor device according to one embodiment ofthe present invention be applied to the laptop personal computer.

FIG. 37B illustrates a portable information terminal (PDA) whichincludes the semiconductor device according to any of the aboveembodiments and is provided with a main body 311 including a displayportion 313, an external interface 315, an operation button 314, and thelike. In addition, a stylus 312 is included as an accessory foroperation. When the semiconductor device according to one embodiment ofthe present invention is applied to the PDA, information can be storedeven without supply of power. In addition, degradation due to writingand erasing is not caused. In addition, operation speed thereof is high.Thus, it is preferable that the semiconductor device according to oneembodiment of the present invention be applied to the PDA.

FIG. 37C illustrates an e-book reader 320 as an example of electronicpaper including the semiconductor device according to any of the aboveembodiments. The e-book reader 320 includes two housings, a housing 321and a housing 323. The housing 321 and the housing 323 are combined witha hinge 337 so that the e-book reader 320 can be opened and closed withthe hinge 337 as an axis. With such a structure, the e-book reader 320can be used like a paper book. When the semiconductor device accordingto one embodiment of the present invention is applied to the electronicpaper, information can be stored even without supply of power. Inaddition, degradation due to writing and erasing is not caused. Inaddition, operation speed thereof is high. Thus, it is preferable thatthe semiconductor device according to one embodiment of the presentinvention be applied to the electronic paper.

A display portion 325 is incorporated in the housing 321 and a displayportion 327 is incorporated in the housing 323. The display portion 325and the display portion 327 may display one image, or may displaydifferent images. When the display portions 325 and 327 displaydifferent images, for example, a display portion on the right side (thedisplay portion 325 in FIG. 37C) can display text and a display portionon the left side (the display portion 327 in FIG. 37C) can displaygraphics.

FIG. 37C illustrates an example in which the housing 321 is providedwith an operation portion and the like. For example, the housing 321 isprovided with a power button 331, operation keys 333, a speaker 335, andthe like. Pages can be turned with the operation keys 333. Note that akeyboard, a pointing device, or the like may also be provided on thesurface of the housing, on which the display portion is provided.Furthermore, an external connection terminal (an earphone terminal, aUSB terminal, a terminal that can be connected to various cables such asan AC adapter and a USB cable, or the like), a recording mediuminsertion portion, and the like may be provided on the back surface orthe side surface of the housing. Further, the e-book reader 320 may havea function of an electronic dictionary.

The e-book reader 320 may be configured to transmit and receiveinformation wirelessly. Through wireless communication, desired bookdata or the like can be purchased and downloaded from an e-book server.

Note that the electronic paper can be applied to an electronic appliancein any field which can display information. For example, the electronicpaper can be used for posters, advertisements in vehicles such astrains, display in a variety of cards such as credit cards, and the likein addition to e-book readers.

FIG. 37D illustrates a mobile phone including the semiconductor deviceaccording to any of the above embodiments. The mobile phone includes twohousings, the housing 340 and the housing 341. The housing 341 includesa display panel 342, a speaker 343, a microphone 344, a pointing device346, a camera lens 347, an external connection terminal 348, and thelike. The housing 341 includes a solar cell 349 for charging the mobilephone, an external memory slot 350, and the like. In addition, anantenna is incorporated in the housing 341. When the semiconductordevice according to one embodiment of the present invention is appliedto the mobile phone, information can be stored even without supply ofpower. In addition, degradation due to writing and erasing is notcaused. In addition, operation speed thereof is high. Thus, it ispreferable that the semiconductor device according to one embodiment ofthe present invention be applied to the mobile phone.

The display panel 342 is provided with a touch panel function. Aplurality of operation keys 345 which is displayed as images isillustrated by dashed lines in FIG. 37D. Note that the mobile phoneincludes a boosting circuit for raising a voltage output from the solarcell 349 to a voltage which is necessary for each circuit. Further, inaddition to the above structure, a structure in which a noncontact ICchip, a small recording device, or the like is incorporated may beemployed.

A display direction of the display panel 342 is appropriately changed inaccordance with the usage mode. Further, the camera lens 347 is providedon the same surface as the display panel 342; thus, it can be used as avideo phone. The speaker 343 and the microphone 344 can be used forvideophone, recording, playback, and the like without being limited toverbal communication. Moreover, the housings 340 and 341 in a statewhere they are developed as illustrated in FIG. 37D can be slid so thatone is lapped over the other; therefore, the size of the mobile phonecan be reduced, which makes the mobile phone suitable for being carried.

The external connection terminal 348 can be connected to various kindsof cables such as an AC adapter or a USB cable, which enables chargingand data communication. Moreover, by inserting a recording medium intothe external memory slot 350, the mobile phone can deal with storing andmoving a large capacity of data. Further, in addition to the abovefunctions, an infrared communication function, a television receptionfunction, and the like may be provided.

FIG. 37E illustrates a digital camera including the semiconductor deviceaccording to any of the above embodiments. The digital camera includes amain body 361, a display portion (A) 367, an eyepiece portion 363, anoperation switch 364, a display portion (B) 365, a battery 366, and thelike. When the semiconductor device according to one embodiment of thepresent invention is applied to the digital camera, information can bestored even without supply of power. In addition, degradation due towriting and erasing is not caused. In addition, operation speed thereofis high. Thus, it is preferable that the semiconductor device accordingto one embodiment of the present invention be applied to the digitalcamera.

FIG. 37F illustrates a television set including the semiconductor deviceaccording to any of the above embodiments. In the television set 370, adisplay portion 373 is incorporated in a housing 371. The displayportion 373 can display an image. Here, the housing 371 is supported bya stand 375.

The television set 370 can be operated by an operation switch of thehousing 371 or a separate remote controller 380. Channels and volume canbe controlled by an operation key 379 of the remote controller 380 sothat an image displayed on the display portion 373 can be controlled.Furthermore, the remote controller 380 may be provided with a displayportion 377 for displaying information output from the remote controller380. When the semiconductor device according to one embodiment of thepresent invention is applied to the television set, information can bestored even without supply of power. In addition, degradation due towriting and erasing is not caused. In addition, operation speed thereofis high. Thus, it is preferable that the semiconductor device accordingto one embodiment of the present invention be applied to the televisionset.

Note that the television set 370 is preferably provided with a receiver,a modem, and the like. With the receiver, a general television broadcastcan be received. Furthermore, when the television set 370 is connectedto a communication network by wired or wireless connection through themodem, one-way (from a transmitter to a receiver) or two-way (between atransmitter and a receiver, between receivers, or the like) informationcommunication can be performed.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

This application is based on Japanese Patent Application serial no.2009-264623 filed with Japan Patent Office on Nov. 20, 2009, the entirecontents of which are hereby incorporated by reference.

The invention claimed is:
 1. A semiconductor device comprising: asubstrate; first to fourth insulating layers stacked in this order overthe substrate; and a first transistor, the first transistor comprising:a first channel formation region including an oxide semiconductor layerbetween the second and the third insulating layers; a first conductivelayer over the third insulating layer and overlapping with the firstchannel formation region; and third and fourth conductive layers on andin direct contact with the oxide semiconductor layer and below the thirdinsulating layer; wherein the first and the fourth insulating layerseach comprise aluminum and oxygen; and wherein the second and the thirdinsulating layers each comprise oxygen.
 2. The semiconductor deviceaccording to claim 1, wherein the second and the third insulating layersare in direct contact with the oxide semiconductor layer.
 3. Thesemiconductor device according to claim 1, wherein the fourth insulatinglayer is in direct contact with the first conductive layer.
 4. Thesemiconductor device according to claim 1, wherein the fourth insulatinglayer is on and in direct contact with a top surface of the firstconductive layer.
 5. The semiconductor device according to claim 1,wherein the substrate is a semiconductor substrate.
 6. The semiconductordevice according to claim 1, wherein there is direct contact between atleast the first and the second insulating layers, between the second andthe third insulating layers, or between the third and the fourthinsulating layers.
 7. The semiconductor device according to claim 1,wherein the oxide semiconductor layer is formed from an In—Ga—Zn—O-basedoxide semiconductor material.
 8. A memory element comprising thesemiconductor device according to claim
 1. 9. An electronic appliancecomprising the semiconductor device according to claim
 1. 10. Asemiconductor device comprising: a substrate; a second transistorcomprising: a second channel formation region including a non-oxidesemiconductor layer; a second conductive layer overlapping with thesecond channel formation region; and a fifth insulating layer betweenthe non-oxide semiconductor layer and the second conductive layer; firstto fourth insulating layers stacked in this order over the secondchannel formation region and over the second conductive layer; and afirst transistor, the first transistor comprising: a first channelformation region including an oxide semiconductor layer between thesecond and the third insulating layers; a first conductive layer overthe third insulating layer and overlapping with the first channelformation region; and third and fourth conductive layers on and indirect contact with the oxide semiconductor layer and below the thirdinsulating layer; wherein the first and the fourth insulating layerseach comprise aluminum and oxygen; and wherein the second and the thirdinsulating layers each comprise oxygen and are in direct contact withthe oxide semiconductor layer.
 11. The semiconductor device according toclaim 10, wherein the third insulating layer is in direct contact withthe first conductive layer.
 12. The semiconductor device according toclaim 10, wherein the fourth insulating layer is in direct contact withthe first conductive layer.
 13. The semiconductor device according toclaim 10, wherein the fourth insulating layer is on and in directcontact with a top surface of the first conductive layer.
 14. Thesemiconductor device according to claim 10, wherein the oxidesemiconductor layer is electrically connected to the second conductivelayer via one of the third and the fourth conductive layers.
 15. Thesemiconductor device according to claim 10, the first transistor furthercomprising: a fifth conductive layer over the fourth insulating layer,wherein the oxide semiconductor layer is electrically connected to thesecond conductive layer via the fifth conductive layer and one of thethird and the fourth conductive layers.
 16. The semiconductor deviceaccording to claim 10, wherein the substrate is a semiconductorsubstrate, and wherein the non-oxide semiconductor layer is comprised inthe semiconductor substrate.
 17. The semiconductor device according toclaim 10, wherein there is direct contact between at least the first andthe second insulating layers, between the second and the thirdinsulating layers, or between the third and the fourth insulatinglayers.
 18. The semiconductor device according to claim 10, wherein theoxide semiconductor layer is formed from an In—Ga—Zn—O-based oxidesemiconductor material.
 19. A memory element comprising thesemiconductor device according to claim
 10. 20. An electronic appliancecomprising the semiconductor device according to claim
 10. 21. Asemiconductor device comprising: a substrate; a second transistorcomprising: a second channel formation region including a non-oxidesemiconductor layer; a second conductive layer overlapping with thesecond channel formation region; and a fifth insulating layer betweenthe non-oxide semiconductor layer and the second conductive layer; firstto fourth insulating layers stacked in this order over the secondchannel formation region and over the second conductive layer; and afirst transistor, the first transistor comprising: a first channelformation region including an oxide semiconductor layer between thesecond and the third insulating layers; a first conductive layer overthe third insulating layer and overlapping with the first channelformation region; and third and fourth conductive layers on and indirect contact with the oxide semiconductor layer and below the thirdinsulating layer; wherein the first and the fourth insulating layerseach comprise aluminum and oxygen; and wherein the second and the thirdinsulating layers each comprise silicon and oxygen.
 22. Thesemiconductor device according to claim 21, wherein the second and thethird insulating layers are in direct contact with the oxidesemiconductor layer.
 23. The semiconductor device according to claim 21,wherein the fourth insulating layer is in direct contact with the firstconductive layer.
 24. The semiconductor device according to claim 21,wherein the fourth insulating layer is on and in direct contact with atop surface of the first conductive layer.
 25. The semiconductor deviceaccording to claim 21, wherein the oxide semiconductor layer iselectrically connected to the second conductive layer via one of thethird and the fourth conductive layers.
 26. The semiconductor deviceaccording to claim 21, the first transistor further comprising: a fifthconductive layer over the fourth insulating layer, wherein the oxidesemiconductor layer is electrically connected to the second conductivelayer via the fifth conductive layer and one of the third and the fourthconductive layers.
 27. The semiconductor device according to claim 21,wherein the substrate is a semiconductor substrate, and wherein thenon-oxide semiconductor layer is comprised in the semiconductorsubstrate.
 28. The semiconductor device according to claim 21, whereinthere is direct contact between at least the first and the secondinsulating layers, between the second and the third insulating layers,or between the third and the fourth insulating layers.
 29. Thesemiconductor device according to claim 21, wherein the oxidesemiconductor layer is formed from an In—Ga—Zn—O-based oxidesemiconductor material.
 30. A memory element comprising thesemiconductor device according to claim
 21. 31. An electronic appliancecomprising the semiconductor device according to claim 21.